Abstract:To lower deposition temperature and reduce thermal mismatch induced stress, heteroepitaxial growth of single-crystalline 3C–SiC on 150mm Si wafers was investigated at 1000°C using alternating supply epitaxy. The growth was performed in a hot-wall low-pressure chemical vapor deposition reactor, with silane and acetylene being employed as precursors. To avoid contamination of Si substrate, the reactor was filled in with oxygen to grow silicon dioxide, and then this thin oxide layer was etched away by silane, followed by a carbonization step performed at 750°C before the temperature was ramped up to 1000°C to start the growth of SiC. Microstructure analyses demonstrated that single-crystalline 3C–SiC is epitaxially grown on Si substrate and the film quality is improved as thickness increases. The growth rate varied from 0.44 to 0.76 ±0.02nm/cycle by adjusting the supply volume of SiH4 and C2H2. The thickness nonuniformity across wafer was controlled with ±1%. For a prime grade 150mm virgin Si(100) wafer, the bow increased from 2.1 to 3.1μm after 960nm SiC film was deposited. The SiC films are naturally n type conductivity as characterized by the hot-probe technique.

SiC heteroepitaxial growth by low pressure chemical vapor deposition on Si(111) substrates

Growth of Single Crystalline 4H-Sic Film by Pyrogenation of PS/OCS/Si(111) Nappe in Low-pressure Ambient Ar and Mechanism of Suppressing Interfacial Dislocations

EPITAXIAL GROWTH OF (0001)ORIENTED 6H-Sic FILMS ON Si(111) SUBSTRATE BY ORGANIC SOL-GEL FILM ANNEALING

Influence of the partial pressure of ethene on the crystallinity of 3C-SiC films grown on Si(111) by chemical vapor deposition

Growth of Crystalline SiC Film Free of Cavities by Heating PS/silica Sol-Gel Coatings on Si (111) Substrate

Growth of 4H-Sic on AlN/Si(100) Complex Substrate by Chemical Vapor Deposition

Growth of 3C–SiC on 150-mm Si(100) substrates by alternating supply epitaxy at 1000°C

Single-crystalline 6H-Sic Heteroepitaxial Growth by Chemical Vapor Deposition on Sapphire Substrates at Reduced Temperatures

Characterization of 4H-Sic Grown on AlN/Si(100) by CVD

Study of Heteroepitaxial 4H-SiC Films Growth on AlN/Si(111) Substrates by CVD

Effect of C/Si Ratio on the Characteristics of 3C-Sic Films Deposited on Si(100) Base on the Four-Step Non-Cooling Process

The Growth of Si on Sic Complex Substrate by Cvd

Growth of 3C-Sic on Si(100) by LPCVD Using a Modified Process after the Clean Step

Growth of SiC Buffers for Strained Si Film Epitaxy

Fast Homoepitaxial Growth of 4H-Sic Films on 4° Off-Axis Substrates in a SiH 4 -C 2 H 4 -H 2 System

Single step silicon carbide heteroepitaxy on a silicon wafer at reduced temperature

Uniformity Investigation in 3C-Sic Epitaxial Layers Grown on Si Substrates by Horizontal Hot-Wall CVD

Surface structure of 3C‐SiC(111) grown on Si(111) surface by C 60 precursor

Chemical Vapor Deposition and Defect Characterization of Silicon Carbide Epitaxial Films

High hole mobility in p-strained Si grown on relaxed SiC virtual substrate by low-pressure chemical vapor deposition

The Growth of 3C-Sic on Si Substrate Using a SiCN Buffer Layer