Abstract:We measure the infrared reflectance spectra of 3C-SiC epilayers on silicon substrates from 400 to 4000 cm−1. An ideal model assuming smooth interfaces and a modified model containing an interfacial conducting layer and Gaussian rough interfaces are separately used for fits of the measured spectra. Although the fitted curve generated by the ideal model can basically agree with the measured one, it fails to reproduce some unusual spectral features. Instead, good fits are obtained by the modified model, from which the epilayer thicknesses, carrier concentrations, surface and interface roughnesses, and the information on the conducting layer are obtained. In comparison with scanning electron microscopy (SEM) results, we show that the infrared reflectance method can precisely determine the epilayer thicknesses. The estimated surface roughnesses are confirmed by atomic force microscopy measurements. The infrared reflectance analyses and SEM observations show that the interfacial roughness and conducting layer are related to the carbonization process. These results indicate that the infrared reflectance technique provides a nondestructive and fast method to evaluate 3C-SiC epilayers and then improve the epitaxial growth process.

Uniformity Investigation in 3C-Sic Epitaxial Layers Grown on Si Substrates by Horizontal Hot-Wall CVD

Heteroepitaxial Growth and Characterization of 3C-Sic Films on Si Substrates Using Lpvcvd

EPITAXIAL GROWTH OF (0001)ORIENTED 6H-Sic FILMS ON Si(111) SUBSTRATE BY ORGANIC SOL-GEL FILM ANNEALING

Heteroepitaxial growth and characterization of 3C-SiC films on on-axis Si (1 1 0) substrates by LPCVD

Growth of 3C–SiC on 150-mm Si(100) substrates by alternating supply epitaxy at 1000°C

Effect of C/Si Ratio on the Characteristics of 3C-Sic Films Deposited on Si(100) Base on the Four-Step Non-Cooling Process

Study on 3C-Sic/si(111) by X-Ray Grazing Incident Diffraction

Influence of the partial pressure of ethene on the crystallinity of 3C-SiC films grown on Si(111) by chemical vapor deposition

Growth of 3C-Sic Films on On-axis 6H-Sic Substrates by LPCVD

The Growth of Si on Sic Complex Substrate by Cvd

Controlled-Growth and Characterization of 3C-Sic and 6H-Sic Films on C-Plane Sapphire Substrates by Lpcvd

SiC heteroepitaxial growth by low pressure chemical vapor deposition on Si(111) substrates

Study of Heteroepitaxial 4H-SiC Films Growth on AlN/Si(111) Substrates by CVD

Infrared Reflectance Study of 3C-Sic Epilayers Grown on Silicon Substrates

10 × 100 Mm 4H-Sic Epitaxial Growth by Warm-Wall Planetary Reactor

Fast Homoepitaxial Growth of 4H-Sic Films on 4° Off-Axis Substrates in a SiH 4 -C 2 H 4 -H 2 System

High growth rate 4H-SiC epitaxial growth using dichlorosilane in a hot-wall CVD reactor

Heteroepitaxial Growth of 3C-SiC on Si(111) by Solid Source Molecular Beam Epitaxy

Effects of Substrate Temperature on Heteroepitaxial Growth of 3C-Sic Thin Films by Mbe on Si(111) Substrate

The Growth of 3C-Sic on Si Substrate Using a SiCN Buffer Layer

Single-crystalline 6H-Sic Heteroepitaxial Growth by Chemical Vapor Deposition on Sapphire Substrates at Reduced Temperatures