Abstract:Silicon carbide (SiC) is an important semiconductor material for fabricating power electronic devices that exhibit higher switch frequency, lower energy loss and substantial reduction both in size and weight in comparison with its Si-based counterparts1-4. Currently, most devices, such as metal-oxide-semiconductor field effect transistors, which are core devices used in electric vehicles, photovoltaic industry and other applications, are fabricated on a hexagonal polytype 4H-SiC because of its commercial availability5. Cubic silicon carbide (3C-SiC), the only cubic polytype, has a moderate band gap of 2.36 eV at room-temperature, but a superior mobility and thermal conduction than 4H-SiC4,6-11. Moreover, the much lower concentration of interfacial traps between insulating oxide gate and 3C-SiC helps fabricate reliable and long-life devices7-10,12-14. The growth of 3C-SiC crystals, however, has remained a challenge up to now despite of decades-long efforts by researchers because of its easy transformation into other polytypes during growth15-19, limiting the 3C-SiC based devices. Here, we report that 3C-SiC can be made thermodynamically favored from nucleation to growth on a 4H-SiC substrate by top-seeded solution growth technique(TSSG), beyond what's expected by classic nucleation theory. This enables the steady growth of quality and large sized 3C-SiC crystals (2~4-inch in diameter and 4.0~10.0 mm in thickness) sustainable. Our findings broaden the mechanism of hetero-seed crystal growth and provide a feasible route to mass production of 3C-SiC crystals,offering new opportunities to develop power electronic devices potentially with better performances than those based on 4H-SiC.

10 × 100 Mm 4H-Sic Epitaxial Growth by Warm-Wall Planetary Reactor

High-Quality 4H-SiC Homogeneous Epitaxy via Homemade Horizontal Hot-Wall Reactor

Homoepitaxial Chemical Vapor Deposition of up to 150 μm Thick 4H-SiC Epilayers in a 10×100 mm Batch Reactor

High growth rate 4H-SiC epitaxial growth using dichlorosilane in a hot-wall CVD reactor

Growth of 3C–SiC on 150-mm Si(100) substrates by alternating supply epitaxy at 1000°C

Fast Homoepitaxial Growth of 4H-Sic Films on 4° Off-Axis Substrates in a SiH 4 -C 2 H 4 -H 2 System

300mm Cold-Wall UHV/CVD Reactor for Low-Temperature Epitaxial (100) Silicon

Advances in 200 mm 4H SiC Wafer Development and Production

Uniformity Investigation in 3C-Sic Epitaxial Layers Grown on Si Substrates by Horizontal Hot-Wall CVD

Measurement of Thermal Field Temperature Distribution Inside Reaction Chamber for Epitaxial Growth of Silicon Carbide Layer

Effect of TCS gas flow and pre-etching on homopitaxial growth of 4H-SiC

Epitaxial Growth of 4H-Sic on 4° Off-Axis Substrate for Power Devices

Growth of 4H-Sic Epilayers with Low Surface Roughness and Morphological Defects Density on 4° Off-Axis Substrates

Epitaxial Growth of SiC Epilayers for 10kv Schottky Diodes Using Chloride-Based CVD

Growth of High-Quality 4H-Sic Epitaxial Layers on 4° Off-Axis C-face 4H-Sic Substrates

Doping And Growth Of Thin Si Epilayer And Sige By Uhv/Cvd

Epitaxial Synthesis of Graphene on 4H-Sic by Microwave Plasma Chemical Vapor Deposition

Multilayer Epitaxial Growth and Fabrication of 4H-SiC BJT with Double Base Epilayers

High quality and wafer-scale cubic silicon carbide single crystals

High quality epitaxial graphene on 4H-SiC by face-to-face growth in ultra-high vacuum

Enabling MOCVD production on next generation 150 mm Indium Phosphide wafer size