Abstract:In this study, the epitaxial growth of 6-inch n-type 4° off-axis Si -face substrates using a horizontal hot-wall LPCVD system was investigated. The study explored the epitaxial growth under different source gas flow rates, growth pressures, and pre-etching times, with particular emphasis on their effects on epitaxial growth rate, epitaxial layer thickness uniformity, doping concentration and uniformity, and epitaxial layer surface roughness. The observation was made that the increase in source gas flow rate led to variations in dopant concentration due to different transport models between nitrogen gas and source gas. Additionally, with the increase in etching time, overetching phenomena occurred, resulting in changes in both dopant concentration and uniformity. Furthermore, the relationships between these three factors and their corresponding indicators were explained by combining the CVD growth process with the laminar flow model. These observed patterns are beneficial for further optimizing growth conditions in industrial settings, ultimately enhancing the quality of the growth process.

What problem does this paper attempt to address?

The paper aims to study the effects of different process parameters on the growth rate, thickness uniformity, doping concentration and its uniformity, and surface roughness of the epitaxial layer during the homoepitaxial growth of 4H-SiC. Specifically, the research focuses on the following three main factors: 1. **Source Gas Flow Rate**: - The study investigated the impact of different source gas (such as Trimethylsilane TCS) flow rates on the epitaxial growth of 4H-SiC. - The results showed that as the source gas flow rate increased, the epitaxial growth rate exhibited a linear increase, and the thickness uniformity of the epitaxial layer improved. - In terms of doping concentration, although the ratio of nitrogen (N₂) to TCS remained constant, the doping concentration decreased, which is related to the lower decomposition rate of nitrogen. 2. **Growth Chamber Pressure**: - Changes in chamber pressure affected various aspects of the epitaxial growth process, including boundary layer thickness and gas flow rate. - Experiments found that within the pressure range below 70 Torr, the thickness uniformity of the epitaxial layer did not change significantly; however, at 80 Torr, the thickness uniformity deteriorated significantly. - As the chamber pressure increased, the doping concentration gradually increased, possibly because the mean free path of nitrogen molecules decreased at higher pressures, leading to an increase in the dissociation degree of nitrogen atoms. 3. **Pre-Etching Time**: - The study examined the impact of different pre-etching times on the quality of the epitaxial layer. - Excessive pre-etching time can lead to over-etching, thereby affecting the doping concentration and uniformity. Through these experiments, the researchers hope to optimize the epitaxial growth conditions to improve the quality of the epitaxial layer for practical applications.

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