Abstract:To lower deposition temperature and reduce thermal mismatch induced stress, heteroepitaxial growth of single-crystalline 3C–SiC on 150mm Si wafers was investigated at 1000°C using alternating supply epitaxy. The growth was performed in a hot-wall low-pressure chemical vapor deposition reactor, with silane and acetylene being employed as precursors. To avoid contamination of Si substrate, the reactor was filled in with oxygen to grow silicon dioxide, and then this thin oxide layer was etched away by silane, followed by a carbonization step performed at 750°C before the temperature was ramped up to 1000°C to start the growth of SiC. Microstructure analyses demonstrated that single-crystalline 3C–SiC is epitaxially grown on Si substrate and the film quality is improved as thickness increases. The growth rate varied from 0.44 to 0.76 ±0.02nm/cycle by adjusting the supply volume of SiH4 and C2H2. The thickness nonuniformity across wafer was controlled with ±1%. For a prime grade 150mm virgin Si(100) wafer, the bow increased from 2.1 to 3.1μm after 960nm SiC film was deposited. The SiC films are naturally n type conductivity as characterized by the hot-probe technique.

Study of Heteroepitaxial 4H-SiC Films Growth on AlN/Si(111) Substrates by CVD

EPITAXIAL GROWTH OF (0001)ORIENTED 6H-Sic FILMS ON Si(111) SUBSTRATE BY ORGANIC SOL-GEL FILM ANNEALING

Characterization of 4H-Sic Grown on AlN/Si(100) by CVD

Growth of 4H-Sic on AlN/Si(100) Complex Substrate by Chemical Vapor Deposition

Homoepitaxial Growth of SiC Thin Film on 4H-SiC Substrate

Photoluminescence Study of Epitaxial 4H-Sic Grown on AlN/Si ( 100 ) Complex Substrate by Chemical Vapor Deposition

Influence of the partial pressure of ethene on the crystallinity of 3C-SiC films grown on Si(111) by chemical vapor deposition

Effect of C/Si Ratio on the Characteristics of 3C-Sic Films Deposited on Si(100) Base on the Four-Step Non-Cooling Process

Optical and surface properties of 3C–SiC thin epitaxial films grown at different temperatures on 4H–SiC substrates

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Fast Homoepitaxial Growth of 4H-Sic Films on 4° Off-Axis Substrates in a SiH 4 -C 2 H 4 -H 2 System

Heteroepitaxial growth and characterization of 3C-SiC films on on-axis Si (1 1 0) substrates by LPCVD

Heteroepitaxial Growth of 3C-SiC on Si(111) by Solid Source Molecular Beam Epitaxy

Epitaxial AlN film with improved quality on Si (111) substrates realized by boron pretreatment via MOCVD

Study on Chloride-based Homoepitaxial Growth on 4° Off-axis (0001) 4H-SiC Substrate

Heteroepitaxial Growth and Characterization of 3C-Sic Films on Si Substrates Using Lpvcvd

SiC heteroepitaxial growth by low pressure chemical vapor deposition on Si(111) substrates

Growth and Mechanical Properties of Amorphous and Nanostructured SiC films

Growth of 3C–SiC on 150-mm Si(100) substrates by alternating supply epitaxy at 1000°C

Effects of Substrate Temperature on Heteroepitaxial Growth of 3C-Sic Thin Films by Mbe on Si(111) Substrate

LPCVD Homoepitaxial Growth on Off-Axis Si-Face 4H-Sic(0001) Substrates