Abstract:The chemical vapor deposition (CVD) growth of boron carbide (B x C) layers on 4H-SiC, 4{\textdegree}off substrates was studied. Depending on the polarity of the substrate, different results were obtained. On Si face, the direct CVD growth at 1600{\textdegree}C under a mixture of BCl 3 +C 3 H 8 systematically led to polycrystalline B x C films, whatever the C/B ratio in the gas phase. On the C face, heteroepitaxial growth was obtained for C/B ratios = 12 or higher with a step bunched morphology. If a boridation step (10 min at 1200{\textdegree}C under BCl 3 flow) was used before the CVD growth, then heteroepitaxy was successful on both substrate polarities. To explain these results, a mechanism is proposed which involves the nature of the chemical bonds at the early stage of nucleation. It is suggested that a full B coverage of the SiC surface should favor the nucleation of the B-rich (0001) plane of B x C, promoting thus the heteroepitaxial growth along this direction.

What problem does this paper attempt to address?

This paper aims to study the heteroepitaxial growth characteristics of boron carbide (B_xC) on 4H - SiC, especially the influence of different substrate polarities on the growth process. Specifically, the researchers focused on the following issues: 1. **Growth differences on substrates with different polarities**: When growing B_xC layers on 4H - SiC substrates on the Si - face and C - face by chemical vapor deposition (CVD) method, different growth results were observed. On the Si - face, direct CVD growth always leads to the formation of polycrystalline B_xC films, regardless of the C/B ratio in the gas. On the C - face, when the C/B ratio reaches 12 or higher, heteroepitaxial growth can be achieved, and the surface presents a stepped morphology. 2. **The influence of pretreatment steps**: The study also explored the effect of boronization treatment (treatment with BCl_3 gas at 1200 °C for 10 minutes) before CVD growth. The results show that after boronization treatment, heteroepitaxial growth can be successfully achieved on both the Si - face and the C - face. 3. **Exploration of growth mechanisms**: In order to understand the above phenomena, the researchers proposed a mechanism, believing that in the early stage of growth, the nature of surface chemical bonds plays a key role in the nucleation of B_xC. Specifically, a complete B - covering layer may promote the nucleation of the B - rich (0001) plane in B_xC, which is conducive to heteroepitaxial growth in this direction. Through these studies, the authors hope to better understand the growth mechanism of B_xC on 4H - SiC, especially the growth behavior on substrates with different polarities, and how to improve the quality of the film by adjusting the growth conditions. This will not only help to improve the performance of B_xC films, but may also provide new possibilities for future electronic device design.

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