Abstract:Edge structure and stability are crucial in determining both the morphology and the growth behaviours of hexagonal boron nitride (h-BN) domains in chemical vapour deposition (CVD) growth under near thermal equilibrium conditions. In this study, various edges of h-BN on three typical transition metal surfaces used for h-BN's CVD growth, Cu(111), Ni(111) and Rh(111), are explored with density functional theory calculations. Different from that in vacuum, our study shows that the formation of non-hexagonal rings, such as pentagon, heptagon or their pairs, is energetically not preferred and both zigzag (ZZ) edges are more stable than the armchair (AC) edge on all the explored catalyst surfaces under typical conditions of h-BN's CVD growth, which explains the broad experimental observation of triangular h-BN domains. More importantly, our results indicate that, instead of the pristine ZZ edge terminated with nitrogen atoms (ZZN), the triangular BN domains observed in experiments are likely to be enclosed with ZZ Klein edges having dangling atoms, ZZB + N or ZZN + B. By applying the theory of Wulff construction, we predicted that the equilibrium shape of a BN domain could be a hexagon enclosed with nitrogen-rich AC edges, triangles enclosed with two different types of ZZ Klein edges or a hexagon enclosed with boron-rich AC edges if the growth is in a N-rich, neutral or B-rich environment, respectively. This study presents how the edges and equilibrium shapes of h-BN domains can be controlled during the CVD synthesis and provides guidelines for further exploring the growth behaviours and improving the quality of CVD-prepared h-BN films.

On the origin of epitaxial rhombohedral-B 4 C growth by CVD on 4H-SiC

On the origin of epitaxial rhombohedral-B4C growth by CVD on 4H-SiC

Epitaxial Growth of Boron Carbide on 4H-SiC

Polarity Effect on the Heteroepitaxial Growth of BxC on 4H-SiC by CVD

Study of Heteroepitaxial 4H-SiC Films Growth on AlN/Si(111) Substrates by CVD

Growth of High-Quality 4H-Sic Epitaxial Layers on 4° Off-Axis C-face 4H-Sic Substrates

Fast Homoepitaxial Growth of 4H-Sic Films on 4° Off-Axis Substrates in a SiH 4 -C 2 H 4 -H 2 System

The influence of carbon on polytype and growth stability of epitaxial hexagonal boron nitride films and layers

The Transition Metal Surface Passivated Edges of Hexagonal Boron Nitride (H-Bn) and the Mechanism of H-Bn's Chemical Vapor Deposition (CVD) Growth

Laser-Assisted Deposition of r-B4C Coatings Using Ethylene as Carbon Precursor

Conformal Chemical Vapor Deposition of B4C Thin Films onto Carbon Nanotubes

Optical and surface properties of 3C–SiC thin epitaxial films grown at different temperatures on 4H–SiC substrates

High growth rate 4H-SiC epitaxial growth using dichlorosilane in a hot-wall CVD reactor

High quality epitaxial graphene on 4H-SiC by face-to-face growth in ultra-high vacuum

Interfacial study of cubic boron nitride films deposited on diamond

Hydrogen Assisted Growth Of High Quality Epitaxial Graphene On The C-Face Of 4h-Sic

Effect of C/Si Ratio on the Characteristics of 3C-Sic Films Deposited on Si(100) Base on the Four-Step Non-Cooling Process

Multilayer Epitaxial Growth and Fabrication of 4H-SiC BJT with Double Base Epilayers

Analysis of the Growth and Properties of 4H-Si_(1-y)C_y Alloy

In-situ and ex-situ Characterizations of PVT-grown 4H-SiC Single Crystals