Abstract:Vertical and lateral heterogeneous structures of two-dimensional (2D) materials have paved the way for pioneering studies on the physics and applications of 2D materials. A hybridized hexagonal boron nitride (h-BN) and graphene lateral structure, a heterogeneous 2D structure, has been fabricated on single-crystal metals or metal foils by chemical vapor deposition (CVD). However, once fabricated on metals, the h-BN/graphene lateral structures require an additional transfer process for device applications, as reported for CVD graphene grown on metal foils. Here, we demonstrate that a single-crystal h-BN/graphene lateral structure can be epitaxially grown on a wide-gap semiconductor, SiC(0001). First, a single-crystal h-BN layer with the same orientation as bulk SiC was grown on a Si-terminated SiC substrate at 850 oC using borazine molecules. Second, when heated above 1150 oC in vacuum, the h-BN layer was partially removed and, subsequently, replaced with graphene domains. Interestingly, these graphene domains possess the same orientation as the h-BN layer, resulting in a single-crystal h-BN/graphene lateral structure on a whole sample area. For temperatures above 1600 oC, the single-crystal h-BN layer was completely replaced by the single-crystal graphene layer. The crystalline structure, electronic band structure, and atomic structure of the h-BN/graphene lateral structure were studied by using low energy electron diffraction, angle-resolved photoemission spectroscopy, and scanning tunneling microscopy, respectively. The h-BN/graphene lateral structure fabricated on a wide-gap semiconductor substrate can be directly applied to devices without a further transfer process, as reported for epitaxial graphene on a SiC substrate.

Multilayer Epitaxial Growth and Fabrication of 4H-SiC BJT with Double Base Epilayers

Homoepitaxial Chemical Vapor Deposition of up to 150 μm Thick 4H-SiC Epilayers in a 10×100 mm Batch Reactor

Growth of High-Quality 4H-Sic Epitaxial Layers on 4° Off-Axis C-face 4H-Sic Substrates

4H-Sic BJTs with Epitaxial Junction Termination Composite Structure

Doping And Growth Of Thin Si Epilayer And Sige By Uhv/Cvd

Fast Homoepitaxial Growth of 4H-Sic Films on 4° Off-Axis Substrates in a SiH 4 -C 2 H 4 -H 2 System

High purity semi-insulating 4H-SiC epitaxial layers by Defect-Competition Epitaxy

Epitaxial Growth of 4H-Sic on 4° Off-Axis Substrate for Power Devices

Epitaxy of SiGe HBT Structure by High Vacuum/Rapid Thermal Processing／Chemical Vapor Deposition

Effect of TCS gas flow and pre-etching on homopitaxial growth of 4H-SiC

UHV/CVD i-Si epitaxy and ion implantation doping for sub-micrometer N -Collector of SiGeHBT

Research on the Influence of Carbon Sources and Buffer Layers on the Homogeneous Epitaxial Growth of 4H-SiC

Doping Concentration and Surface Morphology of 4H-SiC C-Face Epitaxial Growth

High quality epitaxial graphene on 4H-SiC by face-to-face growth in ultra-high vacuum

High growth rate 4H-SiC epitaxial growth using dichlorosilane in a hot-wall CVD reactor

UHV/CVD n--type silicon epitaxy used for SiGe HBT device

10 × 100 Mm 4H-Sic Epitaxial Growth by Warm-Wall Planetary Reactor

A Novel Double-poly Self-aligned High-voltage Power SiGe HBT

High-Quality 4H-SiC Homogeneous Epitaxy via Homemade Horizontal Hot-Wall Reactor

Epitaxial Growth of a Single-Crystal Hybridized Boron Nitride and Graphene layer on a Wide-Band Gap Semiconductor

Ultrahigh vacuum chemical vapor deposition system and its application to growth of nMOSFET and HBT structures