Abstract:In this work, the reliability of different oxide/4H-SiC interfaces under high temperature and carrier-trapping conditions are investigated carefully. In more detail, the carrier-trapping and temperature effects are considered in the electrical characterization of a low breakdown 4H-SiC-based MOSFET by using in turn SiO2, Si3N4, AlN, Al2O3, Y2O3 and HfO2 as gate dielectric. A gate oxide with a high relative permittivity notably improves the transistor performance. In addition, HfO2 assures the MOSFET best immunity behaviors. The obtained results are explained in terms of the carrier channel mobility, device on-state resistance, and oxide electric field. By using HfO2, however, an increased gate leakage current is calculated. This drawback is overcome by inserting a thin interfacial layer (2 nm-thick) in the HfO2/4H-SiC MOS structure. In particular, two alternative gate stacked dielectrics, involving either SiO2 or Al2O3, have proven their effectiveness in preserving the transistor on-state figures of merit while limiting the gate leakage current in the whole explored gate voltage range. To support the prediction capabilities of the presented modeling analysis, the simulations results are compared with experimental data from literature resulting in a good agreement. Low power MOSFETs are used in several applications for which reliability and durability are as critical as performance. For example, referring to power optimizers for photovoltaic (PV) modules, which fall under the low-load and low-voltage category of DC–DC converters, these devices significantly increase the energy generated by each single PV module operating under harsh conditions and stressing environments. In addition, they have to ensure high reliability over the long term of operation.

High Temperature Characterization Of 4h-Sic Normally-On Vertical Jfets With Buried Gate And Buried Field Rings

Numerical and Experimental Investigation on Bipolar Operation of 4H-SIC Normally-on Vertical JFETs

Normally-off trench JFET technology in 4H silicon carbide

Bidirectional Current 4h‐sic VJFET

High Temperature Physical Modeling and Verification of a Novel 4H-Sic Lateral JFET Structure

Development of High Temperature Lateral HV and LV JFETs in 4H-SiC

A comprehensive analysis of breakdown mechanisms in 4H-SiC MOSFET and JFET

A numerical comparison between MOS control and junction control high voltage devices in SiC technology

Fulfilling the Promise of High-Temperature Operation with Silicon Carbide Devices: Eliminating bulky thermal-management systems with SJTs

Switching Performance of Epitaxially Grown Normally-Off 4H-Sic Jfet

Analysis of Novel Packaging Techniques for High Power Electronics in SiC

Static and Dynamic Behaviour of SiC JFET/Si MOSFET Cascade Configuration for High-Performance Power Switches

Comparative Study of RESURF Si/SiC LDMOSFETs for High-Temperature Applications Using TCAD Modeling

Development of 4H-SiC LJFET-Based Power IC

High-Temperature Characterization of a 1.2-Kv SiC MOSFET Using Dynamic Short-Circuit Measurement Technique

Evaluation of Termination Techniques for 4H-Sic Pin Diodes and Trench JFETs

A High Performance 4H-Sic Normally-off VJFET

Design and Application of High-Voltage SiC JFET and Its Power Modules

4H-Sic Super-Junction JFET: Design and Experimental Demonstration

Analysis of 4H-SiC MOSFET with distinct high-k/4H-SiC interfaces under high temperature and carrier-trapping conditions

High Frequency Switching of Sic High Voltage Ljfet