Abstract:The demand for accurate temperature sensing in extreme temperatures is increasing. Traditional silicon-based integrated temperature sensors usually cannot survive above 200 °C. Many researchers have started to focus on semiconductors with a large bandgap. Among them, silicon carbide (SiC) is the most promising one. Nevertheless, most reported SiC sensors are in the form of discrete components and are not compatible with integrated electronics. In this work, we demonstrate an open 4H-SiC CMOS technology, and the fabrication steps are detailed. The temperature sensing elements in this technology, including resistors based on different implanted layers and MOSFETs, are characterized up to 600 °C. At room temperature, the resistive-based elements demonstrate large negative temperature coefficients of resistance (TCRs). With increasing temperature, the TCR starts to decrease and even becomes positive. The TCR change is due to the interplay between increasing dopant ionization rate and decreasing mobility as a function of temperature. The resistance change with temperature fits well into the Steinhart-Hart model and second-order polynomial equation. The p-type diode-connected MOSFET has a sensitivity of 4.35 mV/°C with a good linearity. The nMOS-based sensor has a maximum sensitivity of −9.24 mV/°C but a compromised linearity. The characterization of these sensing elements provides important results for potential users who will work on SiC integrated temperature sensing with this technology.

High Temperature Physical Modeling and Verification of a Novel 4H-Sic Lateral JFET Structure

High Temperature Characterization Of 4h-Sic Normally-On Vertical Jfets With Buried Gate And Buried Field Rings

Development of High Temperature Lateral HV and LV JFETs in 4H-SiC

Development of 4H-SiC LJFET-Based Power IC

Numerical and Experimental Investigation on Bipolar Operation of 4H-SIC Normally-on Vertical JFETs

Comparative Study of RESURF Si/SiC LDMOSFETs for High-Temperature Applications Using TCAD Modeling

Normally-off trench JFET technology in 4H silicon carbide

Modeling and Design of a Monolithically Integrated Power Converter on SiC

Design of high temperature SiC LJFET-based logic inverter and integrated gate driver

Experimental research on temperature dynamics of SiC JFET

4H-Sic Super-Junction JFET: Design and Experimental Demonstration

High Frequency Switching of Sic High Voltage Ljfet

Bidirectional Current 4h‐sic VJFET

A comprehensive analysis of breakdown mechanisms in 4H-SiC MOSFET and JFET

High-Temperature Characterization of a 1.2-Kv SiC MOSFET Using Dynamic Short-Circuit Measurement Technique

Fulfilling the Promise of High-Temperature Operation with Silicon Carbide Devices: Eliminating bulky thermal-management systems with SJTs

Design Criteria of High-Voltage Lateral RESURF JFETs on 4H-Sic

High Temperature Stability and the Performance Degradation of SiC MOSFETs

Temperature Sensing Elements for Harsh Environments in a 4H-SiC CMOS Technology

High temperature stability evaluation of SiC MOSFETs

Design and Application of High-Voltage SiC JFET and Its Power Modules