Abstract:For 4H-SiC MOSFETs, the parasitic PiN body diode causes problems such as significant forward voltage drop of body diode and poor reverse recovery characteristics during high temperature operation. A reasonable solution is a MOSFET with an integrated Schottky barrier diode (SBD) to deactivate the PiN body diode. Since SiC MOSFETs can operate at extremely high temperatures, the characterization of electrical parameters at high temperatures and changing with the temperature are very important for high power applications and system reliability. However, there is a lack of comparison and analysis of the two devices on electrical properties at ultra-high temperatures. In this paper, a 1.2 kV conventional MOSFET and a MOSFET integrated with a junction barrier Schottky (JBS) diode (JBSFET) were fabricated with a consistent process flow. In the temperature range from 300 K to 575 K, analytical models of the temperature dependent electrical parameters of these two devices were established and compared, which were successfully verified by the measurements. These models can provide guidance for ultra-high temperature applications of JBSFETs. Temperature-related expressions can also be used for junction temperature monitoring of temperature-sensitive electrical parameters (TSEPs). Experimental results show that JBSFET has better third quadrant conduction characteristics and higher temperature stability below 450 K, but loses obvious performance advantages at 575 K. So, the recommended operating temperature range of JBSFET is from 300 K to 450 K. Finally, the continuous operation performance of the body diodes in buck converters is analyzed. The higher efficiency of buck converter based on JBSFET's body diode indicates its great application potential in compact converters, especially in the recommended temperature range.

Experimental research on temperature dynamics of SiC JFET

High Temperature Characterization Of 4h-Sic Normally-On Vertical Jfets With Buried Gate And Buried Field Rings

High Temperature Physical Modeling and Verification of a Novel 4H-Sic Lateral JFET Structure

High temperature stability evaluation of SiC MOSFETs

Numerical and Experimental Investigation on Bipolar Operation of 4H-SIC Normally-on Vertical JFETs

High-temperature Electrical Characteristics of JBS-integrated 4H-Sic MOSFETs

High-Temperature Characterization of a 1.2-Kv SiC MOSFET Using Dynamic Short-Circuit Measurement Technique

Junction temperature dynamics of power MOSFET and SiC diode

Comparative Study on High-temperature Electrical Properties of 1.2 Kv SiC MOSFET and JBS-integrated MOSFET

Maximum Junction Temperatures of SiC Power Devices

High Temperature Stability and the Performance Degradation of SiC MOSFETs

Static and Dynamic Characteristics of SiC MOSFET under Extremely High Temperature

Experimental and Theoretical Demonstration of Temperature Limitation for 4H-Sic MOSFET During Unclamped Inductive Switching

Electrical Characterization of 1.2kv SiC MOSFET at Extremely High Junction Temperature

Normally-off trench JFET technology in 4H silicon carbide

Static and Dynamic Behaviour of SiC JFET/Si MOSFET Cascade Configuration for High-Performance Power Switches

Electrical Performances and Physics Based Analysis of 10kv SiC Power MOSFETs at High Temperatures

Investigation and Comparison of Temperature-Sensitive Electrical Parameters of SiC Mosfet at Extremely High Temperatures

Short Circuit Capability and High Temperature Channel Mobility of SiC MOSFETs

Understanding High Temperature Static and Dynamic Characteristics of 1.2 Kv SiC Power MOSFETs

Experimental Investigation on Failure Mechanism of SiC Power MOSFETs under Single Pulse Avalanche Stress