Maximum Junction Temperatures of SiC Power Devices

Kuang Sheng
DOI: https://doi.org/10.1109/ted.2008.2010605
IF: 3.1
2009-01-01
IEEE Transactions on Electron Devices
Abstract:This paper presents a detailed physical analysis on the junction temperatures, thermal stabilities, and thermal runaway effects of self-heating unipolar SiC power devices. Results reveal that the risk of thermal runaway could limit the usable junction temperature of these SiC devices to substantially lower than 200°C, regardless of the device size and the cooling method used.
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