Abstract:For 4H-SiC MOSFETs, the parasitic PiN body diode causes problems such as significant forward voltage drop of body diode and poor reverse recovery characteristics during high temperature operation. A reasonable solution is a MOSFET with an integrated Schottky barrier diode (SBD) to deactivate the PiN body diode. Since SiC MOSFETs can operate at extremely high temperatures, the characterization of electrical parameters at high temperatures and changing with the temperature are very important for high power applications and system reliability. However, there is a lack of comparison and analysis of the two devices on electrical properties at ultra-high temperatures. In this paper, a 1.2 kV conventional MOSFET and a MOSFET integrated with a junction barrier Schottky (JBS) diode (JBSFET) were fabricated with a consistent process flow. In the temperature range from 300 K to 575 K, analytical models of the temperature dependent electrical parameters of these two devices were established and compared, which were successfully verified by the measurements. These models can provide guidance for ultra-high temperature applications of JBSFETs. Temperature-related expressions can also be used for junction temperature monitoring of temperature-sensitive electrical parameters (TSEPs). Experimental results show that JBSFET has better third quadrant conduction characteristics and higher temperature stability below 450 K, but loses obvious performance advantages at 575 K. So, the recommended operating temperature range of JBSFET is from 300 K to 450 K. Finally, the continuous operation performance of the body diodes in buck converters is analyzed. The higher efficiency of buck converter based on JBSFET's body diode indicates its great application potential in compact converters, especially in the recommended temperature range.

High Temperature Characterization of Sicbjts for Power Switching Applications

High Temperature Characterization Of 4h-Sic Normally-On Vertical Jfets With Buried Gate And Buried Field Rings

Investigation of Two High-Temperature Bipolar Phenomena and Characteristics of 1.2-Kv SiC Power Diodes for High-Temperature Applications

Fabrication and Dynamic Switching Characteristics of 6.5kv400a SiC MOSFET Module

Static and Dynamic Characteristics of SiC MOSFET under Extremely High Temperature

High-temperature Electrical Characteristics of JBS-integrated 4H-Sic MOSFETs

Electrical Characterization of 1.2kv SiC MOSFET at Extremely High Junction Temperature

High-temperature Characteristics of SiC Module and 100 Kw SiC AC-DC Converter at a Junction Temperature of 180 °C

Bipolar Characteristic and Mechanism of Unipolar 1.2-Kv Silicon Carbide Power Semiconductors in High Junction Temperature Applications

4H-Sic BJT Characterization at High Current High Voltage

Understanding High Temperature Static and Dynamic Characteristics of 1.2 Kv SiC Power MOSFETs

High Frequency Switching of Sic High Voltage Ljfet

Characterization of 1.2 Kv 4H-Sic Power Mosfets and Si Igbts at Cryogenic and High Temperatures

Characterization of 600V/650V Commercial SiC Schottky Diodes at Extremely High Temperatures

Comparative Study on High-temperature Electrical Properties of 1.2 Kv SiC MOSFET and JBS-integrated MOSFET

High-Temperature Characterization of a 1.2-Kv SiC MOSFET Using Dynamic Short-Circuit Measurement Technique

Dynamic Performance of 6.5kV/400A SiC MOSFET Module and its Gate Driver

Temperature Dependence of Dynamic Performance Characterization of 1.2-kV SiC Power mosfets Compared With Si IGBTs for Wide Temperature Applications

High-Temperature Characterizations of a Half-Bridge Wire-Bondless SiC MOSFET Module

Characteristics of SiC Power Diodes at Extreme Temperatures

Comparison of Static and Switching Characteristics of 1200 V 4H-Sic BJT and 1200 V Si-IGBT