Abstract:In this paper, we demonstrate a high voltage normally-off p-GaN gate high-electron-mobility-transistor (HEMT) with the compatible high threshold voltage (V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TH</inf> ) and high drain current (I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">D</inf> ) at the same time. Through exploitation of the compact and even PEALD-Al <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> O <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> passivation layer, the high I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">D</inf> is additionally complete within the device as a result of the reduction of the access region resistance. Meanwhile, with the optimization of the device structure, V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TH</inf> is considerably improved within the actual device. Supported by the device fabrication, a comparatively large saturation I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">D</inf> (I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">D</inf> _ <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">SAT</inf> ) of 200mA/mm, the normally-off p-GaN gate HEMT presents a V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TH</inf> =4.1V measured by linear extrapolation and a high breakdown voltage (BV) of 960V. This feature recommends that the p-GaN gate HEMT in this work can be a promising candidate in high V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TH</inf> and I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">D</inf> power devices.

All-WBG Cascode Device with p-GaN Gate HEMT and SiC JFET for High-Frequency and High-Temperature Power Switching Applications

A Normally-off Copackaged SiC-JFET/GaN-HEMT Cascode Device for High-Voltage and High-Frequency Applications

Characterization of Static and Dynamic Behavior of 1200 V Normally off GaN/SiC Cascode Devices

A 1200-V GaN/SiC cascode device with E-mode p-GaN gate HEMT and D-mode SiC junction field-effect transistor

650-V Normally-OFF GaN/SiC Cascode Device for Power Switching Applications

Static and Dynamic Characteristics of a 1200-V/22 -Mω Normally-Off SiC/GaN Cascode Device Built with Parallel-Connected SiC JFETs Controlled by a Single GaN HEMT

Static and Dynamic Behaviour of SiC JFET/Si MOSFET Cascade Configuration for High-Performance Power Switches

Bidirectional Current 4h‐sic VJFET

1300 V Normally-OFF p-GaN Gate HEMTs on Si With High ON-State Drain Current

1.2 kV/25 A Normally off P-N Junction/AlGaN/GaN HEMTs With Nanosecond Switching Characteristics and Robust Overvoltage Capability

Dv/Dt-control of 1200-V Co-packaged SiC- JFET/GaN-HEMT Cascode Device

960V normally-off p-GaN gate HEMT with high threshold voltage and drain current

High-Voltage E-Mode P-Gan Gate HEMT on Sapphire with Gate Termination Extension

Dynamic Gate Breakdown of P-Gate GaN HEMTs in Inductive Power Switching

Monolithic fully-controlled HEMT bidirectional power switch with merged Schottky barrier diodes and p-GaN gate transistors for ultra-low turn-on voltage and high threshold voltage

D<i>v</i>/D<i>t</i>-Control of 1200-V Normally-OFF SiC-JFET/GaN-HEMT Cascode Device

Protecting SiC JFET from Gate Overstress in GaN/SiC Cascode Device without Compromising Switching Performance

High Voltage Normally-Off p-GaN Gate HEMT with the Compatible High Threshold and Drain Current

Simulation Design of a High-Breakdown-voltage P-Gan-gate GaN HEMT with a Hybrid AlGaN Buffer Layer for Power Electronics Applications

Short-Circuit Failure Mechanisms of 650-V GaN/SiC Cascode Devices in Comparison With SiC MOSFETs

3.38 Mhz Operation of 1.2kv SiC MOSFET with Integrated Ultra-Fast Gate Drive