Abstract:A silicon carbide junction field effect transistors (SiC-JFETs) /gallium-nitride high electron mobility transistor (GaN-HEMT) hybrid power switch is proposed with scaled-up current rating enabled by parallel-connected high-voltage (HV, i.e., 1200 V) SiC-JFETs controlled by a single low-voltage enhanced-mode GaN-HEMT in a cascode configuration. Only one set of gate driver (for the GaN HEMT) is required by the cascode device and therewith higher efficiency is achieved regarding the gate-driver loss compared with a board-level parallel connection of several standalone devices (e.g., SiC MOSFETs or SiC/Si cascode devices). Key factors that affect the current-sharing balance between the parallel-connected SiC JFETs and associated matching method are systematically investigated by taking into account the specific transient behaviors of the cascode device. It is found that the variation in SiC JFETs’ threshold voltages plays the most important role in current balancing when the GaN HEMT drives the SiC JFETs internally with superior fast speed. A 1200-V/22-mΩ proof-of-concept prototype of the proposed device with two SiC JFETs in parallel is demonstrated and characterized in a comparative study considering the matching of JFETs. By matching the SiC JFETs according to their transfer curves, the current-sharing imbalance among the SiC JFETs can be limited to be less than 1.5%. This all-wide-bandgap device exhibits high-temperature stability of threshold voltage, extremely small gate-driver loss, and low interelectrode capacitances, of which features are promising for high-frequency applications.

A Normally-off Copackaged SiC-JFET/GaN-HEMT Cascode Device for High-Voltage and High-Frequency Applications

650-V Normally-OFF GaN/SiC Cascode Device for Power Switching Applications

Static and Dynamic Characteristics of a 1200-V/22 -Mω Normally-Off SiC/GaN Cascode Device Built with Parallel-Connected SiC JFETs Controlled by a Single GaN HEMT

Towards Fully Integrated SiC Cascade Power Switches for High Voltage Applications

All-WBG Cascode Device with p-GaN Gate HEMT and SiC JFET for High-Frequency and High-Temperature Power Switching Applications

Static and Dynamic Behaviour of SiC JFET/Si MOSFET Cascade Configuration for High-Performance Power Switches

Characterization of Static and Dynamic Behavior of 1200 V Normally off GaN/SiC Cascode Devices

Development of 6kv SiC Hybrid Power Switch Based on 1200V SiC JFET and MOSFET

A 1200-V GaN/SiC cascode device with E-mode p-GaN gate HEMT and D-mode SiC junction field-effect transistor

Transient analysis of Si-MOS and SiC-JFET cascode power switches

Dv/Dt-control of 1200-V Co-packaged SiC- JFET/GaN-HEMT Cascode Device

Proposal of A Gan/Sic Hybrid Field-Effect Transistor for Power Switching Applications

Fabrication and Dynamic Switching Characteristics of 6.5kv400a SiC MOSFET Module

Proposal of a novel GaN/SiC hybrid FET (HyFET) with enhanced performance for high-voltage switching applications

15-Kv/40-a FREEDM Supercascode: A Cost-Effective SiC High-Voltage and High-Frequency Power Switch

High Voltage Si/SiC Hybrid Switch: an Ideal Next Step for SiC

Design and Application of High-Voltage SiC JFET and Its Power Modules

Paralleled GaN DHEMTs Integrated Cascode GaN Switch for High-Current Applications

Protecting SiC JFET from Gate Overstress in GaN/SiC Cascode Device without Compromising Switching Performance

HyFET—A GaN/SiC Hybrid Field-Effect Transistor

Normally-off trench JFET technology in 4H silicon carbide