Abstract:Solid-state semiconductor switches are emerging as an attractive choice for the fast switching of compact, repetitive, and pulsed power systems. In particular, the high voltage and fast switching capabilities of SiC MOSFETs are well suited for many applications when appropriately gated. For instance, the turn-on and turn-off characteristics of such devices are strongly dependent on the gate driving circuitry. Traditional commercial gate drivers, typically utilizing push–pull or totem-pole driving topologies, are often not well suited for fast, high current switching with rise times on the order of 10–20 ns, as the driving performance is highly dependent on the combined RLC characteristics of the driving circuitry and the switching device. The proposed gate drive topology utilizes a current-carrying inductor to rapidly charge theMOSFET gate–source capacitance. A high-voltage inductive kick generates the necessary potential to drive the inductor current into the gate through the parasitic gate impedance. As the energy stored in the drive inductor is continuously variable, it can be adjusted such that the gate voltage settles to a lower value, typically 20 V, after the initial kick to prevent excessive gate–source overvoltage. With an inductive drive current of ~23 A, a peak $text{d}I/text{d}t$ of 25 kA $mu text{s}^{-1}$ was achieved for the tested bare SiC MOSFET die. Additionally, a peak $text{d}I/text{d}t$ of 13 kA $mu text{s}^{-1}$ was achieved with the TO-247 packaged device.

High Frequency Switching of Sic High Voltage Ljfet

High Temperature Characterization Of 4h-Sic Normally-On Vertical Jfets With Buried Gate And Buried Field Rings

An Integrated Gate Driver Based on SiC MOSFETs Adaptive Multi-Level Control Technique

Design of high temperature SiC LJFET-based logic inverter and integrated gate driver

Development of High Temperature Lateral HV and LV JFETs in 4H-SiC

Static and Dynamic Behaviour of SiC JFET/Si MOSFET Cascade Configuration for High-Performance Power Switches

Development of 6kv SiC Hybrid Power Switch Based on 1200V SiC JFET and MOSFET

Switching Performance of Epitaxially Grown Normally-Off 4H-Sic Jfet

Dynamic Performance of 6.5kV/400A SiC MOSFET Module and its Gate Driver

High Temperature Physical Modeling and Verification of a Novel 4H-Sic Lateral JFET Structure

3.38 Mhz Operation of 1.2kv SiC MOSFET with Integrated Ultra-Fast Gate Drive

Fabrication and Dynamic Switching Characteristics of 6.5kv400a SiC MOSFET Module

A Normally-off Copackaged SiC-JFET/GaN-HEMT Cascode Device for High-Voltage and High-Frequency Applications

A High Temperature Gate Drive Circuit for SiC MOSFET

High Current Gate Drive Circuit with High Temperature Potential for SiC MOSFET Module

Design and Application of High-Voltage SiC JFET and Its Power Modules

Fast SiC Switching Limits for Pulsed Power Applications

Design of a Dual Channel High Current Silicon Carbide MOSFET Driver

Design and Evaluation of a High Performance Silicon Carbide MOSFET Driver

High-Speed Gate Driver Using GaN HEMTs for 20-MHz Hard Switching of SiC MOSFETs