Abstract:Silicon Carbide (SiC) is a booming semiconductor material with a wider bandgap than silicon, which brings superior electrical performance for applications such as high critical electric field, good high-temperature characteristics, etc. Among SiC devices, MOSFET received increasing attention, due to its excellent advantages such as low switching loss, high operating frequency, etc. In recent years, SiC MOSFETs were under fast development, while facing numerous challenges. For high voltage SiC MOSFET, the size of the device and drift region resistance are the main bottlenecks. The superjunction (SJ) structure is well-known as a "milestone" in the history of power devices, especially for MOSFET. Superjunction achieved a better trade-off between the breakdown voltage and the specific on-resistance by introducing a transverse electric field to the drift layer. A 3.3kV-class SiC SJ MOSFET was so far reported as a ultra-low specific on-resistance for 3.3 m Omega cm(2) at room temperature and 6.2 m Omega cm(2) at 175 degrees C.[21] However, the development of SiC SJ MOSFETs is facing challenges, in terms of the fabrication of the p-pillar, the charge balance condition, etc. In this paper, recent progress on SiC SJ MOSFET was reviewed and listed through countries and regions. Achievements in both theoretical simulation and device fabrication were analyzed and compared. Moreover, constraints and prospects for the development of SiC SJ MOSFET were also discussed. Through this review, it is expected to help researchers to summarize recent advances on the SiC SJ MOSFET and to analyze the future trends, and to provide strategic planning for practitioners.

SiC Junction Control, an Alternative to MOS Control High Voltage Switching Devices

A numerical comparison between MOS control and junction control high voltage devices in SiC technology

Static and Dynamic Behaviour of SiC JFET/Si MOSFET Cascade Configuration for High-Performance Power Switches

A comprehensive analysis of breakdown mechanisms in 4H-SiC MOSFET and JFET

Transient analysis of Si-MOS and SiC-JFET cascode power switches

SiC devices parameters effects on the electrical behaviour of mCascode switch

Towards Fully Integrated SiC Cascade Power Switches for High Voltage Applications

Performance of SiC Cascode Switches with Si MOS Gate

Normally-off trench JFET technology in 4H silicon carbide

Development of SiC Superjunction MOSFET: A Review

Silicon MOS Controlled Bipolar Power Switching Devices Using Trench Technology

Numerical and Experimental Investigation on Bipolar Operation of 4H-SIC Normally-on Vertical JFETs

Considerations for SiC Super Junction MOSFET: On-resistance, Gate Structure, and Oxide Shield

Switching Performance of Epitaxially Grown Normally-Off 4H-Sic Jfet

A Comparative Study of SiC MOSFETs with and Without Integrated SBD

Current Status and Future Prospects of SiC Power JFETs and ICs.

High Voltage Si/SiC Hybrid Switch: an Ideal Next Step for SiC

A Novel SiC Superjunction Trench MOSFET with Integrated Heterojunction Diode for Improved Performance

Superjunction SiC TCOX-MOSFET: Study and Comparison

Novel SiC Trench MOSFET with Improved Third-Quadrant Performance and Switching Speed

Integrated Junction Barrier Schottky Diode and MOS-Channel Diode in SiC Planar MOSFETs for Optimization of Reverse Performances