Abstract:Emerging silicon carbide (SiC) MOSFET power devices promise to displace silicon IGBTs from the majority of challenging power electronics applications by enabling superior efficiency and power density, as well as capability to operate at higher temperatures. This paper reports on the recent progress in development of 1200V SiC power MOSFETs. Two different chip sizes were fabricated and tested: 15A $({\bf 0.225}{\bf cm}\times {\bf 0.45cm})$ and 30A $({\bf 0.45}{\bf cm}\times {\bf 0.45cm})$ devices. First, the 30A MOSFETs were packaged as discrete components and static and switching measurements were performed. The device blocking voltage was 1200V and typical on-resistance was less than ${\bf 50}\ {\bf m}{\bf\Omega}$ with gate-source voltages of 0V and 20V, respectively. The total switching losses were 0.6 mJ, over five times lower than the competing devices. Next, a buck converter was built for evaluating longterm stability of the MOSFETs and typical switching waveforms are presented. Finally, the 15A MOSFETs were used for fabrication of 150A all-SiC modules. The module on-resistance values were in the range of ${\bf 10}\ {\bf m}{\bf\Omega}$, resulting in the best-in-class on-state voltage values of 1.5V at nominal current. The module switching losses were 2.3 mJ during turn-on and 1 mJ during turn-off, also significantly better than competing designs. The results validate performance advantages of the SiC MOSFETs, moving them a step closer to power electronics applications.

Silicon MOS Controlled Bipolar Power Switching Devices Using Trench Technology

The New Generation of Power Semiconductor Devices

The trench Insulated Gate Bipolar Transistor— a high power switching device

Single To Double Gate Tigbts - Possible Road-Map To Ultra-High Voltage Bipolar-Mos Devices

Optimum Design of 1.4kv Non-Punch-Through Trench Igbts: the Next Generation of High-Power Switching Devices

Optimum design of 1.4 kV trench IGBTs-the next generation of high power switching devices

Characterising Trench Igbts in Resonant Switching Using Single Ended and Half-Bridge Application Circuits

SiC Junction Control, an Alternative to MOS Control High Voltage Switching Devices

High Frequency 700v Powerbrane Ligbts In 0.35 Mu M Bulk Cmos Technology

Trench Gate IGBTs for Zero Current Switching Applications

A novel dual gated lateral MOS-bipolar power device

Mos Controlled Diodes - A New Power Diode

Trench MOS-gated power devices

1.4 kV, 25 A, PT and NPT trench IGBTs with optimum forward characteristics

Analysis of Double Trench Insulated Gate Bipolar Transistor

1.2 Kv Trench Insulated Gate Bipolar Transistors (igbt's) with Ultralow On-Resistance

2-D Modelling and Optimisation of Trench Insulated Gate Bipolar Transistors (TIGBT)

A numerical comparison between MOS control and junction control high voltage devices in SiC technology

Membrane High Voltage Devices - A Milestone Concept In Power Ics

Long-term reliability of a hard-switched boost power processing unit utilizing SiC power MOSFETs

Recent advances in silicon carbide MOSFET power devices