Abstract:High-voltage p-channel 4H-SiC insulated gate bipolar transistors (IGBTs) have been fabricated and characterized. The devices have a forward voltage drop of 7.2 V at 100 A/cm2 and a -16 V gate bias at 25 'C, corresponding to a specific on-resistance of 72 run. CM2 and a differential on-resistance of 26mQ - CM2. Hole mobility of 12 CM2/V. s in the inversion channel with a threshold voltage of -6 V was. achieved by optimizing the n+ well doping profile and gate oxidation process. A novel current enhancement layer was adopted to reduce the KET resistance and enhance conductivity modulation by improving hole current spreading and suppressing the electron current conduction through the top n-p-n transistor. Inductive switching results have shown that the p-IGBT exhibited a turn-off time of -1 ps and a turn-off energy loss of 12 mj at 4-kV dc-link voltage and 6-A load current at 25 'C. The turn-off trajectory from the measured inductive load switching waveforms and numerical simulations shows that the p-IGBT had a near-square reverse bias safe operating area. Numerical simulations have been conducted to achieve an improved tradeoff betweenforward voltage drop and switching off energy by investigating the effects of drift layer lifetime and p-buffer layer parameters. The advantages of SiC p-IGBTs, such as the potential of very low ON-state resistance, slightly positive temperature coefficient, high switching speed, small switching losses, and large safe operating area, make them suitable and attractive for high-power high-frequency applications.

Optimum Design of 1.4kv Non-Punch-Through Trench Igbts: the Next Generation of High-Power Switching Devices

Optimum design of 1.4 kV trench IGBTs-the next generation of high power switching devices

1.4 kV, 25 A, PT and NPT trench IGBTs with optimum forward characteristics

2-D Modelling and Optimisation of Trench Insulated Gate Bipolar Transistors (TIGBT)

1.2 Kv Trench Insulated Gate Bipolar Transistors (igbt's) with Ultralow On-Resistance

Characterising Trench Igbts in Resonant Switching Using Single Ended and Half-Bridge Application Circuits

The trench Insulated Gate Bipolar Transistor— a high power switching device

Single To Double Gate Tigbts - Possible Road-Map To Ultra-High Voltage Bipolar-Mos Devices

Silicon MOS Controlled Bipolar Power Switching Devices Using Trench Technology

Analysis of Double Trench Insulated Gate Bipolar Transistor

An Experimental And Numerical Investigation Of Igbt Blocking Characteristics

Trench Gate IGBTs for Zero Current Switching Applications

Characteristics Of Trench Gate And Dmos Igbts In A Zcs Single-Ended Resonant Inverter

Enhanced On-State Performance Trench IGBT with a Self-Aligned P Base

Novel Approach Toward Plasma Enhancement in Trench-Insulated Gate Bipolar Transistors

An On-State Analytical Model for the Trench Insulated Gate Bipolar Transistor (TIGBT)

Performance Compare and Test for Trenchstop and NPT IGBT

Enhancing Turn-off Performance in IGCT-Based High Power Applications—Part Ⅱ: Hybrid Switch with IGBT Integration and Experimental Validation

Silicon Carbide n-IGBTs: Structure Optimization for Ruggedness Enhancement

Design and Characterization of High-Voltage 4H-Sic P-Igbts

The Advantages and Applications of IGBT Compared with Conventional BJT and MOSFET