Numerical Analysis for a P-Drift Region N-IGBT With Enhanced Dynamic Electric Field Modulation Effect
Xiaorui Xu,Wanjun Chen,Shuyi Zhang,Chao Liu,Ruize Sun,Zhaoji Li,Bo Zhang
DOI: https://doi.org/10.1109/ted.2022.3165142
IF: 3.1
2022-01-01
IEEE Transactions on Electron Devices
Abstract:This article studies the underlying physical mechanism and comprehensive characteristics of the N-channel IGBT (N-IGBT) with P-drift region (PD-IGBT). Distinguishing from the conventional N-IGBT with N-drift region (ND-IGBT), the main blocking junction (${J}_{ ext {MB}}$ ) of the PD-IGBT is changed from the emitter side to the collector side, which leads to a significant enhancement effect of dynamic electric field modulation. Based on the effect, the PD-IGBT features fast dynamic electric field (E-field) building speed in the drift region and a high E-field at the edge of the field-stop (FS) layer, which can extract excess carriers stored in the device rapidly during the turn-off transient, thus reducing the turn-off loss (${E}_{
m {OFF}}$ ) and turn-off time (${t}_{
m {OFF}}$ ) of the device. Moreover, the change of ${J}_{ ext {MB}}$ location can also alleviate the E-field crowding phenomenon at the trench gate corner, thus providing an optimized relationship between breakdown voltage (BV) and ON-state voltage, as well as high avalanche energy. Simulation results show that, when compared with the state-of-the-art N-channel ND-IGBT, the PD-IGBT offers 46% shorter ${t}_{
m {OFF}}$ , 57% lower ${E}_{
m {OFF}}$ , and 60% larger avalanche energy without compromising other device characteristics.
engineering, electrical & electronic,physics, applied