Optimum design of 1.4 kV trench IGBTs-the next generation of high power switching devices
t trajkovic,p waind,j thomson,f udrea,x yuan,sheng huang,w i milne,g a j amaratunga,d e crees
DOI: https://doi.org/10.1049/ic:19990599
1999-01-01
Abstract:The trench insulated gate bipolar transistor (IGBT) is the most promising structure for the next generation of power semiconductor devices with wide applications ranging from motor control (1.4 kV) to HVDC (6.5 kV). Here, the authors present, for the first time, an optimum design of a 1.4 kV trench IGBT using a new, fully integrated, optimisation system comprising process and device simulators and the RSM optimiser. The use of this new TCAD system has contributed largely to realizing devices with characteristics far superior to the previous DMOS generation of IGBTs. Full experimental results on 1.4 kV trench IGBTs which are in excellent agreement with the TCAD predictions are reported.