Characterising Trench Igbts in Resonant Switching Using Single Ended and Half-Bridge Application Circuits

DIM de Silva,NK Shrestha,PR Palmer,F Udrea,GAJ Amaratunga,D Chamund,L Coulbeck,P Waind

DOI: https://doi.org/10.1109/peds.2003.1282679

2003-01-01

Abstract:This paper reports the behaviour of a new class of 1.2kV, 25A NPT Trench gate IGBT in Zero Current Switching (ZCS) and Zero Voltage Switching (ZVS) and compares its performance with an equivalent state-of the-art DMOS IGBT. Two low-medium power application circuits are used as test circuits for characterisation. With its superior on-state modulation characteristics the Trench IGBT shows better performance during conduction, particularly at high frequencies and high currents. However in the ZVS mode turn-off losses should be minimised by optimising circuit parameters in order to utilise the on-state performance advantage of the Trench IGBT.