Abstract:Silicon carbide (SiC) power devices have demonstrated many performance advantages over their silicon (Si) counterparts. As the inherent material limitations of Si devices are being swiftly realized, wide-bandgap (WBG) materials such as SiC have become increasingly attractive for high power applications. In particular, SiC power metal oxide semiconductor field effect transistors' (MOSFETs) high breakdown field tolerance, superior thermal conductivity and low-resistivity drift regions make these devices an excellent candidate for power dense, low loss, high frequency switching applications in extreme environment conditions. In this paper, a novel power processing unit (PPU) architecture is proposed utilizing commercially available 4H-SiC power MOSFETs from CREE Inc. A multiphase straight boost converter topology is implemented to supply up to 10 kW full-scale. High Temperature Gate Bias (HTGB) and High Temperature Reverse Bias (HTRB) characterization is performed to evaluate the long-term reliability of both the gate oxide and the body diode of the SiC components. Finally, susceptibility of the CREE SiC MOSFETs to damaging effects from heavy-ion radiation representative of the on-orbit galactic cosmic ray environment are explored. The results provide the baseline performance metrics of operation as well as demonstrate the feasibility of a hard-switched PPU in harsh environments.

Silicon Carbide n-IGBTs: Structure Optimization for Ruggedness Enhancement

Optimum design of 1.4 kV trench IGBTs-the next generation of high power switching devices

Optimum Design of 1.4kv Non-Punch-Through Trench Igbts: the Next Generation of High-Power Switching Devices

1200-V Trench-FS IGBT: Process-Based Modeling and Short-Circuit Safe Operating Area (SCSOA) Optimization with the TOPSIS Method

Silicon MOS Controlled Bipolar Power Switching Devices Using Trench Technology

A Review of SiC IGBT: Models, Fabrications, Characteristics, and Applications

2-D Modelling and Optimisation of Trench Insulated Gate Bipolar Transistors (TIGBT)

Advanced SPICE Modeling of Large Power IGBT Modules

Evaluation of Long-Term Reliability and Overcurrent Capabilities of 15-kV SiC MOSFETs and 20-kV SiC IGBTs During Narrow Current Pulsed Conditions

Review and analysis of SiC MOSFETs’ ruggedness and reliability

Study and Optimization of Field Limiting Rings for 10kV SiC Insulated Gate Bipolar Transistor

Exploring SiC Planar IGBTs Towards Enhanced Conductivity Modulation Comparable to SiC Trench IGBTs

Long-term reliability of a hard-switched boost power processing unit utilizing SiC power MOSFETs

SiC double-trench MOSFETs with source-recessed structure for enhanced ruggedness

Gate Structure Design of SiC Trench IGBTs for Injection-Enhancement Effect

A Novel SiC Trench MOSFET Structure with Enhanced Short Circuit Robustness

Comparative Evaluation of Short Circuit Robustness Across Generation of 1.2kv SiC MOSFETs

A Comprehensive Analysis of Unclamped-Inductive-Switching-Induced Electrical Parameter Degradations and Optimizations for 4H-SiC Trench Metal-Oxide-Semiconductor Field-Effect Transistor Structures

Structure Analysis on the Short-Circuit Robustness for 1200V Planar SiC MOSFETs

Failure Mechanism Analysis of SiC MOSFETs in Unclamped Inductive Switching Conditions