Abstract:The higher voltage blocking capability and faster switching speed of silicon-carbide (SiC) mosfets have the potential to replace Si insulated gate bipolar transistors (IGBTs) in medium-low-voltage and high-power applications. In this paper, a state-of-the-art commercially available 325 A, 1700 V SiC mosfet module has been fully characterized under various load currents, bus voltages, and gate resistors to reveal their switching capability. Meanwhile, Si IGBT modules with similar power ratings are also tested under the same conditions. From the test results, several interesting points have been obtained: different to the Si IGBT module, the over-shoot current of the SiC mosfet module increases linearly with the increase of the load current and it has been explained by a model of the over-shoot current proposed in this paper; the induced negative gate voltage due to the complementary device turn-off (crosstalk effect) is more harmful to the SiC mosfet module than the induced positive gate voltage during turn-on when the gate off-voltage is 6 V; the maximum dvdt and didt (electromagnetic interference) during switching transients of the SiC mosfet module are close to those of the Si IGBT module when the gate resistance is larger than 8 but the switching loss of the SiC mosfet module is much smaller; the switching losses of the Si IGBT module are greater than those of the SiC mosfet module even when the gate resistance of the former is reduced to zero. An accurate power loss model, which is suitable for a three-phase two-level converter based on SiC mosfet modules considering the power loss of the parasitic capacitance, has been presented and verified in this paper. From the model, a 96.2 efficiency can be achieved at the switching frequency of 80kHz and the power of 100 kW.

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Gate Structure Design of SiC Trench IGBTs for Injection-Enhancement Effect

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A Novel 3300V Conductivity Modulation Enhanced IGBT with P-type Schottky Contact and Partial N-type Buried Layer

SiC Trench IGBT with Diode-Clamped P-Shield for Oxide Protection and Enhanced Conductivity Modulation

A Hybrid-Channel Injection Enhanced Modulation 4H-SiC IGBT Transistors With Improved Performance

Enhanced On-State Performance Trench IGBT with a Self-Aligned P Base

A Novel SiC Trench MOSFET with Self-Aligned N-Type Ion Implantation Technique

A Light-Emitting-Diodes-Integrated Silicon Carbide Insulated Gate Bipolar Transistor

Design and Characterization of High-Voltage 4H-Sic P-Igbts

A Novel High Performance 6500V IGBT with P-type Schottky Contact

A New SiC Trench MOSFET Structure With Protruded p-Base for Low Oxide Field and Enhanced Switching Performance

Performance Evaluation of High-Power SiC MOSFET Modules in Comparison to Si IGBT Modules

A novel 4H–SiC IGBT with double gate PMOS for improving the switch controllability and FBSOA

4H-Sic Trench Gate Lateral MOSFET with Dual Source Trenches for Improved Performance and Reliability