Abstract:Silicon Carbide (SiC) MOSFETs have gained significant attention in power electronics for their superior characteristics. Despite advances in 1.2kV SiC MOSFET generations, a comprehensive comparative analysis of different device types remains limited. This study examines the short-circuit (SC) behavior of 1.2kV SiC MOSFETs across multiple vendors and generations, including planar and trench structures. Key metrics such as Short Circuit Withstand Time (SCWT), SC energy, SC peak power, SC energy density, and SC current density were evaluated at DC bus voltages of 400V, 600V, and 800V. Our findings reveal that third-generation (3G) devices exhibit inferior SC performance due to smaller die areas that impede heat dissipation, with 800V survival times as low as 2.25 μs for GeneSiC-3G. In contrast, trench-based designs showed improved resilience. Infineon-1G, with an active area 44.3% smaller than Littelfuse-1G and 45% smaller than CREE-2G, achieved comparable SCWT (4.5 μs vs. 4.5 μs for Littelfuse and 4 μs for CREE-2G) while demonstrating superior thermal management, with a SC energy density of 0.096 J/mm² and current density of 41.74 A/mm² at 800V. Similarly, another trench device, Rohm-3G, outperformed planar 3G devices, with a SCWT of 3.5 μs and peak power of 110 kW at 800V. Post-SC failure mechanisms were systematically analyzed using optical microscopy, Lock-In Thermal Emission Microscopy (LITEM), and Focused Ion Beam (FIB), revealing gate leakage paths and damage in the active regions and two-finger area. These findings offer significant insights into the trade-offs between on-state performance and SC robustness, providing manufacturers and designers with crucial guidance for developing optimized SiC MOSFET designs for high-power applications.

1.2-Kv Planar SiC MOSFETs with Improved Short-Circuit Capability by Adding Plasma Spreading Layer

Experimental Investigations on Short-Circuit Capability of a New Structure Planar SiC MOSFETs

Plasma Spreading Layers: an Effective Method for Improving Surge and Avalanche Robustness of SiC Devices

Performance and Short-Circuit Reliability of SiC MOSFETs with Enhanced JFET Doping Design

SiC Trench MOSFET with Reduced Switching Loss and Increased Short-Circuit Capability

Improvement on short-circuit ability of SiC super-junction MOSFET with partially widened pillar structure

Low Switching Loss and Increased Short-Circuit Capability Split-Gate SiC Trench MOSFET with p-type pillar

Comprehensive Short Circuit Behavior and Failure Analysis of 1.2kv SiC MOSFETs Across Multiple Vendors and Generations

Improved Blocking and Switching Characteristics of Split-Gate 1.2kV 4H-SiC MOSFET with a Deep P-well

Improved HF-FOM and SC Ruggedness of Split-Gate 4H-Sic MOSFET with P+ Buffer

Theoretical Analysis and Experimental Characterization of 1.2-kV 4H-SiC Planar Split-Gate MOSFET With Source Field Plate

Improving Surge Current Capability of SiC Merged PiN Schottky Diode by Adding Plasma Spreading Layers

Experimental Comparison of a New 1.2 kV 4H-SiC Split-Gate MOSFET with Conventional SiC MOSFETs in Terms of Reliability Robustness

Design Optimization and Reliability Evaluation in 1.2 kV SiC Trench MOSFET with Deep P Structure

Structure Analysis on the Short-Circuit Robustness for 1200V Planar SiC MOSFETs

A Novel SiC Trench MOSFET Structure with Enhanced Short Circuit Robustness

Single-event burnout resilient design of 4H-SiC MOSFETs through staircase-like buffer layer

A New 4H-SiC Trench MOSFET With Improved Reverse Conduction, Breakdown, and Switching Characteristics

A novel 4H-SiC MOSFET for low switching loss and high-reliability applications

A Novel 4H-SiC SGT MOSFET with Improved P+ Shielding Region and Integrated Schottky Barrier Diode

A New SiC Trench MOSFET Structure With Protruded p-Base for Low Oxide Field and Enhanced Switching Performance