Abstract:A new silicon carbide (SiC) planar-gate insulated-gate bipolar transistor (IGBT) is proposed and comprehensively investigated in this paper. Compared to the traditional SiC planar-gate IGBT, the new IGBT boasts a much stronger injection enhancement effect, which leads to a low on-state voltage (VON) approaching the SiC trench-gate IGBT. The strong injection enhancement effect is obtained by a heavily doped carrier storage layer (CSL), which creates a hole barrier under the p-body to hinder minority carriers from being extracted away through the p-body. A p-shield is located at the bottom of the CSL and coupled to the p-body of the IGBT by an embedded p-MOSFET (metal-oxide-semiconductor field effect transistors). In off-state, the heavily doped CSL is shielded by the p-MOSFET clamped p-shield. Thus, a high breakdown voltage is maintained. At the same time, owing to the planar-gate structure, the proposed IGBT does not suffer the high oxide field that threatens the long-term reliability of the trench-gate IGBT. The turn-off characteristics of the new IGBT are also studied, and the turn-off energy loss (EOFF) is similar to the conventional planar-gate IGBT. Therefore, the new IGBT achieves the benefits of both the conventional planar-gate IGBT and the trench-gate IGBT, i.e., a superior VON-EOFF trade-off and a low oxide field.

SiC Trench IGBT with Diode-Clamped P-Shield for Oxide Protection and Enhanced Conductivity Modulation

Investigations of P-Shielded SiC Trench IGBT with Considerations on IE Effect, Oxide Protection and Dynamic Degradation

Gate Structure Design of SiC Trench IGBTs for Injection-Enhancement Effect

SiC Trench MOSFET with Reduced Switching Loss and Increased Short-Circuit Capability

SiC trench MOSFET with heterojunction diode for low switching loss and high short‐circuit capability

SiC Trench MOSFET with Self-biased p-shield for Low R ON-SP and Low OFF-state Oxide Field

Self-clamped P-shield 4H-SiC trench MOSFET for low turn-off loss and suppress switching oscillation

SiC Trench MOSFET with Integrated Self-Assembled Three-Level Protection Schottky Barrier Diode

Exploring SiC Planar IGBTs Towards Enhanced Conductivity Modulation Comparable to SiC Trench IGBTs

SiC Trench MOSFET with Shielded Fin-Shaped Gate to Reduce Oxide Field and Switching Loss

Cell Design Consideration in SiC Planar IGBT and Proposal of New SiC IGBT with Improved Performance Trade-Off

A 4H-SiC trench IGBT with controllable hole-extracting path for low loss

Dynamic Degradation in SiC Trench MOSFET with a Floating P-Shield Revealed with Numerical Simulations

A Novel 4H-SiC SGT MOSFET with Improved P+ Shielding Region and Integrated Schottky Barrier Diode

A New 4H-SiC Trench MOSFET With Improved Reverse Conduction, Breakdown, and Switching Characteristics

SiC Trench MOSFET with Depletion-Mode pMOS for Enhanced Short-Circuit Capability and Switching Performance

SiC Fin-Shaped Gate Trench MOSFET with Integrated Schottky Diode

A New SiC Planar-Gate IGBT for Injection Enhancement Effect and Low Oxide Field

Low Switching Loss and Increased Short-Circuit Capability Split-Gate SiC Trench MOSFET with p-type pillar

Novel SiC Trench MOSFET with Improved Third-Quadrant Performance and Switching Speed

High performance SiC trench-type MOSFET with an integrated MOS-channel diode