Abstract:In this work, degradations of dynamic characteristics for silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors under repetitive avalanche shocks are investigated in details. With the help of Silvaco TCAD simulations, gate capacitance versus gate voltage (C-g-V-g) measurement, and three-terminal charge pumping test, the main damaged position is demonstrated to be the SiC/SiO2 interface along junction FET (JFET) region instead of the body diode where most of the avalanche current passes through. Dominant avalanche degradation mechanism is then confirmed to be the injection of holes into the gate oxide above the JFET region. Since the channel region and the main junction of body diode are not seriously damaged by the avalanche stress, static parameters all remain stable. Meanwhile, due to the injection of holes, the depletion layer beneath the JFET region gets thinner, resulting in the increase of gate-drain capacitance (C-gd) under low drain-source voltage (V-ds) bias condition. It further takes responsibilities for the increments in input capacitance (C-iss), output capacitance (C-oss), and reverse transfer capacitance (C-rss). Moreover, it results in the extension of Miller plateau. Therefore, the increase of gate charge and delay of turn-OFF time after being stressed by repetitive avalanche shocks are monitored. Moreover, turn-ON and turn-OFF dissipated energies after different unclamped-inductive-switching stress cycles are extracted. They are rarely influenced by the stress for the overlapping areas of voltage and current during switching procedures are relatively stable.

Dynamic Degradation in SiC Trench MOSFET with a Floating P-Shield Revealed with Numerical Simulations

Charge Storage Effect in SiC Trench MOSFET with a Floating P-Shield and Its Impact on Dynamic Performances

SiC Trench MOSFET with Reduced Switching Loss and Increased Short-Circuit Capability

SiC Trench MOSFET with Shielded Fin-Shaped Gate to Reduce Oxide Field and Switching Loss

SiC Fin-Shaped Gate Trench MOSFET with Integrated Schottky Diode

Investigations of P-Shielded SiC Trench IGBT with Considerations on IE Effect, Oxide Protection and Dynamic Degradation

SiC Trench MOSFET with Self-biased p-shield for Low R ON-SP and Low OFF-state Oxide Field

SiC Trench MOSFET with Depletion-Mode pMOS for Enhanced Short-Circuit Capability and Switching Performance

Low Switching Loss and Increased Short-Circuit Capability Split-Gate SiC Trench MOSFET with p-type pillar

Static and Dynamic Behaviour of SiC JFET/Si MOSFET Cascade Configuration for High-Performance Power Switches

A New SiC Trench MOSFET Structure With Protruded p-Base for Low Oxide Field and Enhanced Switching Performance

Self-clamped P-shield 4H-SiC trench MOSFET for low turn-off loss and suppress switching oscillation

A comprehensive analysis of breakdown mechanisms in 4H-SiC MOSFET and JFET

SiC Fin-Channel MOSFET for Enhanced Gate Shielding Effect

Comprehensive Investigations on Degradations of Dynamic Characteristics for SiC Power MOSFETs under Repetitive Avalanche Shocks

A Novel 4H-SiC SGT MOSFET with Improved P+ Shielding Region and Integrated Schottky Barrier Diode

Influence of Different Device Structures on the Degradation for Trench-Gate SiC MOSFETs: Taking Avalanche Stress as an Example

SiC Trench IGBT with Diode-Clamped P-Shield for Oxide Protection and Enhanced Conductivity Modulation

Investigation on the Degradation Mechanism for SiC Power MOSFETs Under Repetitive Switching Stress

SiC trench MOSFET with heterojunction diode for low switching loss and high short‐circuit capability

Understanding Short-Circuit Failure Mechanism of Double-Trench SiC Power MOSFETs