Suppression of Parasitic Jfet Effect in Trench Igbts by Using A Self-Aligned P Base Process

X Yuan,T Trajkovic,F Udrea,J Thomson,PR Waind,P Taylor,GAJ Amaratunga

DOI: https://doi.org/10.1016/s0038-1101(02)00132-6

IF: 1.916

2002-01-01

Solid-State Electronics

Abstract:This paper presents the suppression of the parasitic JFET effect in high voltage Trench insulated gate bipolar transistors (IGBTs) by employing a new self-aligned p base process. The parasitic JFET effect is no longer negligible because the lowly doped n− drift region becomes longer and at the same time the cell current density becomes lower in high voltage applications. The self-aligned p base process is based on the use of a common nitride mask for trench etching and p boron diffusion and therefore eliminates an extra process mask. Furthermore, the self-aligned p base structure effectively suppresses the parasitic JFET effect into a small area near the trench source and results in considerably enhanced on-state performance. Extensive numerical simulations using the MEDICI simulator have been carried out and the results show that by using the new self-aligned p base process one can relieve the pressure resulted from processing very deep trenches in high voltage Trench IGBTs.