Design and Process Analysis of a Split-Gate Trench Power MOSFET with Bottom-Trench Hk-Pillar Superjunction for Enhanced Performance

Yunteng Jiang,Zhentao Xiao,Zonghao Zhang,Juncheng Zhang,Chenxing Wang,Wenjun Li,Haimeng Huang,Aynul Islam,Hongqiang Yang

2024-11-15

Abstract:In this paper, we propose a simulation-based novel Split-Gate Trench MOSFET structure with an optimized fabrication process to enhance power efficiency, switching speed, and thermal stability for high-performance semiconductor applications. Integrating high-k pillars with superjunction structures beneath the split gate enhancing breakdown performance by reducing critical field intensity by up to 35%, the device achieves a 15% improvement in Figures of Merit (FOMs) for BV2/Ron,sp. Dynamic testing reveals approximately a 25% reduction in both input and output capacitance, as well as gate-to-drain charge (QGD). This reduction, coupled with an approximately 40% improvement in Baliga's High-Frequency Figure of Merit (BHFFOM) and over 20% increase in the New High-Frequency Figure of Merit (NHFFOM), underscores the design's suitability for high-speed, high-efficiency power electronics. Simulations examining the effects of high-k pillar depth indicate that an optimal depth of 3.5 um achieves a balanced performance between BV and Ron,sp. The influence of high-k materials on BT-Hk-SJ MOSFET performance was investigated by comparing hafnium dioxide (HfO2), nitride, and oxynitride. Among these, HfO2 demonstrated optimal performance across static, dynamic, and diode characteristics due to its high dielectric constant, while material choice had minimal impact, with variations kept within 5%.

Applied Physics

What problem does this paper attempt to address?

### What problems does this paper attempt to solve?

This paper aims to propose a new type of Split - Gate Trench MOSFET structure through design and process analysis to enhance power efficiency, switching speed and thermal stability, thereby improving the performance of high - performance semiconductor applications. Specifically, this research addresses the following key issues:

1. **Improving power efficiency and switching speed**:
- The split - gate design significantly reduces the Miller plateau capacitance and switching charge, thus improving the switching performance, which is crucial for high - frequency applications.
- By introducing a High - κ material pillar super - junction structure, the electric field distribution is further optimized, the critical electric field strength is reduced, and the breakdown voltage of the device is increased.

2. **Optimizing the manufacturing process**:
- Current Trench MOSFETs face problems such as high parasitic resistance, large gate - drain capacitance and poor reliability during the manufacturing process, which affect the feasibility of mass production and the efficiency in high - frequency applications.
- The research proposes a new manufacturing process. By integrating a High - κ material pillar super - junction structure at the bottom of the trench, the manufacturing process is simplified and the performance is improved.

3. **Balancing breakdown voltage (BV) and on - resistance (Ron,sp)**:
- In industrial applications, the trade - off between breakdown voltage and on - resistance is crucial. Through optimizing the depth of the High - κ pillar, this research finds a balance point, so that the device has a relatively low on - resistance while maintaining a relatively high breakdown voltage.

4. **Reducing parasitic effects**:
- The p - pillar in the traditional super - junction structure may introduce parasitic bipolar transistor effects, resulting in latch - up and premature breakdown. By using High - κ materials to replace the p - pillar, these parasitic effects are avoided, thereby improving the reliability and performance of the device.

5. **Improving dynamic performance**:
- The new structure shows significant advantages in dynamic tests. For example, the input and output capacitances and the gate - drain charge (QGD) are respectively reduced by about 25%, the Baliga high - frequency figure - of - merit (BHFFOM) is increased by about 40%, and the new high - frequency figure - of - merit (NHFFOM) is increased by more than 20%.

In summary, by introducing the Bottom - Trench High - κ Pillar Superjunction (BT - H κ - SJ) structure, this paper aims to solve the deficiencies of existing Trench MOSFETs in terms of power efficiency, switching speed, thermal stability and manufacturing process, providing a better choice for high - performance power electronics applications.