Abstract:The application of conventional power metal-oxide-semiconductor field-effect transistor (MOSFET) is limited by the famous one-dimensional "silicon limit" (1D-limit) in the trade-off relationship between specific on-resistance (RSP) and breakdown voltage (BV). In this paper, a new power MOSFET architecture is proposed to achieve a beyond-1D-limit RSP-BV trade-off. Numerical TCAD (technology computer-aided design) simulations were carried out to comparatively study the proposed MOSFET, the conventional power MOSFET, and the superjunction MOSFET. All the devices were designed with the same breakdown voltage of ~550 V. The proposed MOSFET features a deep trench between neighboring p-bodies and multiple p-islands located at the sidewall and bottom of the trench. The proposed MOSFET allows a high doping concentration in the drift region, which significantly reduces its RSP compared to the conventional power MOSFET. The multiple p-islands split the electric field into multiple peaks and help the proposed MOSFET maintain a similar breakdown voltage to the conventional power MOSFET with the same drift region thickness. Another famous device technology, the superjunction MOSFET (SJ-MOSFET), also breaks the 1D-limit. However, the SJ-MOSFET suffers a snappy reverse recovery performance, which is a notorious drawback of SJ-MOSFET and limits the range of its application. On the contrary, the proposed MOSFET presents a superior reverse recovery performance and can be used in various power switching applications where hard commutation is required.

A High Breakdown Voltage Superjunction MOSFET by Utilizing Double Trench Filling Epitaxy Growth

A Higher Breakdown Voltage and Lower Specific on Resistance Superjunction MOSFET with Non-normal Breakdown Voltage Distribution

Design and Process Analysis of a Split-Gate Trench Power MOSFET with Bottom-Trench Hk-Pillar Superjunction for Enhanced Performance

A novel split gate trench MOSFET with high-k pillar embedded for higher breakdown voltage

Deep oxide trench termination structure for super-junction MOSFET

A comprehensive analysis of breakdown mechanisms in 4H-SiC MOSFET and JFET

Investigation of a 4H-SiC Trench MOSFET with Back-Side Super Junction

4.87 kV SiC MOSFET Using HfSiOx/SiO2 Gate Dielectrics Combined with PN Pillars

A Novel Super-Junction DT-MOS with Floating p Regions to Improve Short-Circuit Ruggedness

Trench angle: a key design factor for a deep trench superjunction MOSFET

A Lateral Power P-Channel Trench MOSFET Improved by Variation Vertical Doping

A High-Performance SiC Super-Junction MOSFET With a Step-Doping Profile

Design of high voltage super junction VDMOS

Trench MOS-gated power devices

Fabrication and Optimization of a High Speed Deep-Trench Super-Junction MOSFET with Improved EMI Performance

A Novel Deep-Trench Super-Junction SiC MOSFET with Improved Specific On-Resistance

A New Trench-Planner Gate Mosfet Structure

New Power MOSFET with Beyond-1D-Limit RSP-BV Trade-Off and Superior Reverse Recovery Characteristics.

A Study on the Electrical Properties of High Voltage SiC Power MOSFET with Double Trench Structures

Design Optimization and Reliability Evaluation in 1.2 kV SiC Trench MOSFET with Deep P Structure

Improvement on short-circuit ability of SiC super-junction MOSFET with partially widened pillar structure