Abstract:Silicon Carbide (SiC) is a booming semiconductor material with a wider bandgap than silicon, which brings superior electrical performance for applications such as high critical electric field, good high-temperature characteristics, etc. Among SiC devices, MOSFET received increasing attention, due to its excellent advantages such as low switching loss, high operating frequency, etc. In recent years, SiC MOSFETs were under fast development, while facing numerous challenges. For high voltage SiC MOSFET, the size of the device and drift region resistance are the main bottlenecks. The superjunction (SJ) structure is well-known as a "milestone" in the history of power devices, especially for MOSFET. Superjunction achieved a better trade-off between the breakdown voltage and the specific on-resistance by introducing a transverse electric field to the drift layer. A 3.3kV-class SiC SJ MOSFET was so far reported as a ultra-low specific on-resistance for 3.3 m Omega cm(2) at room temperature and 6.2 m Omega cm(2) at 175 degrees C.[21] However, the development of SiC SJ MOSFETs is facing challenges, in terms of the fabrication of the p-pillar, the charge balance condition, etc. In this paper, recent progress on SiC SJ MOSFET was reviewed and listed through countries and regions. Achievements in both theoretical simulation and device fabrication were analyzed and compared. Moreover, constraints and prospects for the development of SiC SJ MOSFET were also discussed. Through this review, it is expected to help researchers to summarize recent advances on the SiC SJ MOSFET and to analyze the future trends, and to provide strategic planning for practitioners.

A Study on the Electrical Properties of High Voltage SiC Power MOSFET with Double Trench Structures

Comparative Study on Reliability and Application Features of SiC MOSFET

Dynamic Performance of 6.5kV/400A SiC MOSFET Module and its Gate Driver

Fabrication and Dynamic Switching Characteristics of 6.5kv400a SiC MOSFET Module

A numerical comparison between MOS control and junction control high voltage devices in SiC technology

Silicon MOS Controlled Bipolar Power Switching Devices Using Trench Technology

Design Optimization and Reliability Evaluation in 1.2 kV SiC Trench MOSFET with Deep P Structure

A comprehensive analysis of breakdown mechanisms in 4H-SiC MOSFET and JFET

A Novel Gate Control Strategy for 3.4kv Cascade Sic Mosfets Stack

Electrical Characterization and Analysis of 4H-Sic Lateral MOSFET (LMOS) for High-Voltage Power Integrated Circuits

4H-Sic Trench Gate Lateral MOSFET with Dual Source Trenches for Improved Performance and Reliability

Recent advances in silicon carbide MOSFET power devices

Comparing the State-of-the-Art SiC MOSFETs: Test results reveal characteristics of four major manufacturers? 900-V and 1.2-kV SiC devices

4.87 kV SiC MOSFET Using HfSiOx/SiO2 Gate Dielectrics Combined with PN Pillars

Design and Fabrication of 860V SiC Trench MOSFET with Stripe and Rectangular Cells.

Design and Application of High-Voltage SiC JFET and Its Power Modules

Review on the Reliability Mechanisms of SiC Power MOSFETs: A Comparison between Planar-Gate and Trench-Gate Structures

Development of SiC Superjunction MOSFET: A Review

SiC double-trench MOSFETs with source-recessed structure for enhanced ruggedness

Influence of Different Device Structures on the Degradation for Trench-Gate SiC MOSFETs: Taking Avalanche Stress as an Example