Abstract:Silicon Carbide (SiC) power devices have become commercialized and are being adopted for many applications after 40 years of effort to produce large diameter wafers and high performance device structures. This paper provides a historical perspective of the key breakthroughs that were needed to make progress towards this goal. The JBS rectifier concept was a critical innovation required to make SiC power Schottky rectifiers viable. The Baliga-Pair or Cascode concept was an intermediate step to realize a practical SiC power switch in the 1990s. An essential unique innovation created in the 1990s was the shielded planar SiC power MOSFET structure that is now commonly used for commercial products. Shielded trench-gate SiC power MOSFETs were also proposed in the 1990s which led to commercial products in the last 5 years. Although achieving a low specific on-resistance in SiC power MOSFETs was essential at the inception of the technology, its penetration into power electronics applications is now driven by performance metrics for high frequency circuits. Device structural enhancements to improve the high frequency figures-of-merit are described that have led to major strides in performance. This includes the JBSFET concept where a JBS diode is integrated into the MOSFET structure to suppress current flow through the body diode; the SG and BG MOSFET structures which reduce the gate-drain charge; and the OCTFET structure where the gate-drain overlap area is reduced. Future developments in SiC power devices include increasing the blocking voltage rating to expand the applications spectrum. In addition, a SiC monolithic bi-directional switch has been demonstrated to allow implementation of matrix converters; and a SiC monolithic reverse blocking switch has been demonstrated to allow deployment of current source inverters.

Current Status and Future Prospects of SiC Power JFETs and ICs.

Demonstration of the first SiC power integrated circuit

Static and Dynamic Behaviour of SiC JFET/Si MOSFET Cascade Configuration for High-Performance Power Switches

Design and Application of High-Voltage SiC JFET and Its Power Modules

Transient analysis of Si-MOS and SiC-JFET cascode power switches

SiC Junction Control, an Alternative to MOS Control High Voltage Switching Devices

Development of SiC Superjunction MOSFET: A Review

Towards Fully Integrated SiC Cascade Power Switches for High Voltage Applications

Development of 4H-SiC LJFET-Based Power IC

Silicon Carbide Power Devices: Progress and Future Outlook

A numerical comparison between MOS control and junction control high voltage devices in SiC technology

4H-Sic Super-Junction JFET: Design and Experimental Demonstration

Recent progress of SiC power devices and applications

Recent Progress in SiC and GaN Power Devices

Development and Prospect of SiC Power Devices in Power Grid

Development of High-Voltage SiC Power Electronic Devices

Advances in SiC power MOSFET technology

A comprehensive analysis of breakdown mechanisms in 4H-SiC MOSFET and JFET

Bidirectional Current 4h‐sic VJFET

Characterization of Normally-off SiC Vertical JFET Devices and Inverter Circuits

Performance Evaluation of SiC MOSFET/BJT/Schottky Diode in A 1mhz Single Phase PFC