Abstract:This paper conducts a comprehensive analysis of gallium nitride (GaN), silicon carbide (SiC), and silicon (Si) in the electronics and power industries, highlighting their current applications and future trends. GaN emerges as a front-runner for high-speed switching with its high-frequency, high-efficiency characteristics, and its superior electron mobility and voltage endurance are vital for miniaturized, high-performance electronics. In contrast, SiC's robustness at high temperatures, superior thermal conductivity, and exceptional breakdown field strength make it the material of choice for high-power, high-temperature electronics, playing a pivotal role in LED lighting, renewable energy systems, and power grid technologies. While Si lags behind in high-temperature and high-power performance, its cost-effectiveness and mature manufacturing keep it significant in the market. Furthermore, the paper addresses the technical challenges and innovative solutions in switch component applications for SiC and GaN, such as gate drive issues, breakdown mechanism optimization, and Si's ongoing advancements in microelectronics. By examining the strengths and weaknesses of each material, future research directions are pinpointed, including material synthesis, device design, and system integration advancements, aiming to enhance their application performance and efficiency in the electronics and power sector. In summary, GaN, SiC, and Si each bring unique advantages to electronics and power applications, indicating a future of more efficient, reliable, and eco-friendly technological innovations in power electronics.

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