Recent Advances in Wide Bandgap Power Switching Devices

Kuang Sheng,Qing Guo
DOI: https://doi.org/10.1149/05003.0179ecst
2012-01-01
Abstract:The development of high voltage, high current density and high temperature power devices are playing a critical role in the advance of power conversion technology for energy saving and emission reduction applications. As hopeful replacements for current silicon-based devices, wide bandgap power semiconductor devices have been under intense research and development. This paper reviews the recent advances in SiC and GaN-based power switching devices for power electronics applications.
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