Abstract:β-phase gallium oxide (Ga2O3) is an emerging ultrawide bandgap (UWBG) semiconductor (EG ∼ 4.8 eV), which promises generational improvements in the performance and manufacturing cost over today's commercial wide bandgap power electronics based on GaN and SiC. However, overheating has been identified as a major bottleneck to the performance and commercialization of Ga2O3 device technologies. In this work, a novel Ga2O3/4H-SiC composite wafer with high heat transfer performance and an epi-ready surface finish has been developed using a fusion-bonding method. By taking advantage of low-temperature metalorganic vapor phase epitaxy, a Ga2O3 epitaxial layer was successfully grown on the composite wafer while maintaining the structural integrity of the composite wafer without causing interface damage. An atomically smooth homoepitaxial film with a room-temperature Hall mobility of ∼94 cm2/Vs and a volume charge of ∼3 × 1017 cm–3 was achieved at a growth temperature of 600 °C. Phonon transport across the Ga2O3/4H-SiC interface has been studied using frequency-domain thermoreflectance and a differential steady-state thermoreflectance approach. Scanning transmission electron microscopy analysis suggests that phonon transport across the Ga2O3/4H-SiC interface is dominated by the thickness of the SiNx bonding layer and an unintentionally formed SiOx interlayer. Extrinsic effects that impact the thermal conductivity of the 6.5 μm thick Ga2O3 layer were studied via time-domain thermoreflectance. Thermal simulation was performed to estimate the improvement of the thermal performance of a hypothetical single-finger Ga2O3 metal–semiconductor field-effect transistor fabricated on the composite substrate. This novel power transistor topology resulted in a ∼4.3× reduction in the junction-to-package device thermal resistance. Furthermore, an even more pronounced cooling effect is demonstrated when the composite wafer is implemented into the device design of practical multifinger devices. These innovations in device-level thermal management give promise to the full exploitation of the promising benefits of the UWBG material, which will lead to significant improvements in the power density and efficiency of power electronics over current state-of-the-art commercial devices.This article has not yet been cited by other publications.

(Invited) Wide Bandgap Semiconductor Based Devices for Digital and Industrial Applications

(Invited) Recent Progress in Wide-Bandgap Semiconductor Devices for a More Electric Future

Technology and Applications of Wide Bandgap Semiconductor Materials: Current State and Future Trends

Progress in Research on Wide Band-Gap Semiconductor SiC and Its Application

Impact of Wide-Bandgap Technology on Renewable Energy and Smart-Grid Power Conversion Applications Including Storage

Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

Recent Advances in Wide Bandgap Power Switching Devices

Power Electronics Revolutionized: A Comprehensive Analysis of Emerging Wide and Ultrawide Bandgap Devices

(Electronics and Photonics Division Award) Research Advances Wide- and Ultrawide-Bandgap Power Switching Devices

Wide bandgap semiconductor-based integrated circuits

Recent Progress in SiC and GaN Power Devices

Ga2O3-on-SiC Composite Wafer for Thermal Management of Ultrawide Bandgap Electronics

Status and Prospects of Cubic Silicon Carbide Power Electronics Device Technology

A systematic analysis of wide band gap semiconductor used in power electronics

Silicon Carbide: Material Growth, Device Processing, and Applications

Ga 2 O 3 -on-SiC Composite Wafer for Thermal Management of Ultrawide Bandgap Electronics

Preface to the Special Issue on Ultra-Wide Bandgap Semiconductor Gallium Oxide: from Materials to Devices

Emerging Trends in Silicon Carbide Power Electronics Design

Reviewing of Using Wide-bandgap Power Semiconductor Devices in Electric Vehicle Systems: from Component to System

A Review of Wide Bandgap Semiconductors: Insights into SiC, IGZO, and Their Defect Characteristics

Gallium nitride vertical power devices on foreign substrates: a review and outlook