Abstract:Emerging silicon carbide (SiC) MOSFET power devices promise to displace silicon IGBTs from the majority of challenging power electronics applications by enabling superior efficiency and power density, as well as capability to operate at higher temperatures. This paper reports on the recent progress in development of 1200V SiC power MOSFETs. Two different chip sizes were fabricated and tested: 15A $({\bf 0.225}{\bf cm}\times {\bf 0.45cm})$ and 30A $({\bf 0.45}{\bf cm}\times {\bf 0.45cm})$ devices. First, the 30A MOSFETs were packaged as discrete components and static and switching measurements were performed. The device blocking voltage was 1200V and typical on-resistance was less than ${\bf 50}\ {\bf m}{\bf\Omega}$ with gate-source voltages of 0V and 20V, respectively. The total switching losses were 0.6 mJ, over five times lower than the competing devices. Next, a buck converter was built for evaluating longterm stability of the MOSFETs and typical switching waveforms are presented. Finally, the 15A MOSFETs were used for fabrication of 150A all-SiC modules. The module on-resistance values were in the range of ${\bf 10}\ {\bf m}{\bf\Omega}$, resulting in the best-in-class on-state voltage values of 1.5V at nominal current. The module switching losses were 2.3 mJ during turn-on and 1 mJ during turn-off, also significantly better than competing designs. The results validate performance advantages of the SiC MOSFETs, moving them a step closer to power electronics applications.

Demonstration of the first SiC power integrated circuit

Current Status and Future Prospects of SiC Power JFETs and ICs.

Demonstration Of The First Power Ic On 4h-Sic

Design and Application of High-Voltage SiC JFET and Its Power Modules

Development of 4H-SiC LJFET-Based Power IC

Fabrication and testing of 3500V/15A SiC JFET based power module for high-voltage, high-frequency applications

4H-Sic Super-Junction JFET: Design and Experimental Demonstration

Design and Experimental Demonstration of 1.35 Kv SiC Super Junction Schottky Diode

Towards Fully Integrated SiC Cascade Power Switches for High Voltage Applications

Fabrication and Testing of 4 500 V SiC SBD and JFET Power Modules

Modeling and Design of a Monolithically Integrated Power Converter on SiC

Static and Dynamic Behaviour of SiC JFET/Si MOSFET Cascade Configuration for High-Performance Power Switches

High Temperature Characterization Of 4h-Sic Normally-On Vertical Jfets With Buried Gate And Buried Field Rings

High-voltage full-SiC power module: Device fabrication, testing and high frequency application in kW-level converter

Experimental Demonstration and Analysis of a 1.35-Kv 0.92-M $\omega \cdot \text {cm}^{2}$ SiC Superjunction Schottky Diode

Transient analysis of Si-MOS and SiC-JFET cascode power switches

Development of High Temperature Lateral HV and LV JFETs in 4H-SiC

Design and Experimental Demonstration of 4H-SiC Lateral High-Voltage MOSFETs With Double-RESURFs Technology for Power ICs

Fabrication and Dynamic Switching Characteristics of 6.5kv400a SiC MOSFET Module

Development of High-Voltage SiC Power Electronic Devices

Recent advances in silicon carbide MOSFET power devices