Abstract:Due to the outstanding material properties, silicon carbide (SiC) power device is the most promising alternative to silicon devices and can work at higher junction temperature. However, existing packaging technologies obstruct the use of SiC devices at high temperature and impede the continued exploration of SiC devices in high-temperature applications. This article proposes a novel hermetic metal packaging method called compact-interleaved package. The compact-interleaved power module handles the mentioned problems from three key considerations: packaging parasitic parameters, direct electrode measurement structure, and packaging materials. Based on the elaborate high-temperature double pulse test platform, dynamic characteristics of 1.2-kV/13-mΩ 4H-SiC power mosfet are studied under the condition of extremely high junction temperature (up to 550 °C) and extremely high switching speed (about 3 kA/μs). The dynamic characteristics of SiC mosfet are theoretically analyzed and verified by experimental measurements. Compared with other SiC bipolar devices, SiC mosfet maintains outstanding dynamic characteristics at extremely high temperatures and has an optimal operating high-temperature range. Finally, this article demonstrates an extreme-high-temperature power electronic converter to verify the superiority of the packaging method, and also proves the extreme-high-temperature power converting capability of SiC mosfet.

Modeling and Design of a Monolithically Integrated Power Converter on SiC

Compact-Interleaved Packaging Method of Power Module With Dynamic Characterization of 4H-SiC MOSFET and Development of Power Electronic Converter at Extremely High Junction Temperature

Towards Fully Integrated SiC Cascade Power Switches for High Voltage Applications

Concept and Technology for Full Monolithic MOSFET and JBS Vertical Integration in Multi-Terminal 4H-SiC Power Converters

Dynamic Performance of 6.5kV/400A SiC MOSFET Module and its Gate Driver

Design and Application of High-Voltage SiC JFET and Its Power Modules

A 400 V Buck Converter integrated with Gate-Drivers and low-voltage Controller in a 25–600 V mixed-mode SiC CMOS technology

High Temperature Physical Modeling and Verification of a Novel 4H-Sic Lateral JFET Structure

Breaking the Theoretical Limit of SiC Unipolar Power Device - a Simulation Study

Fabrication and Dynamic Switching Characteristics of 6.5kv400a SiC MOSFET Module

Electro-Thermal Coupling Characteristics and Modeling of SiC MOSFET Modules under High Pulse Current Conditions

Multi-Domain Modeling and Design Optimization of Synchronous Rectifiers for SiC-Based High- Load-Current LLC Converter

High Temperature Characterization Of 4h-Sic Normally-On Vertical Jfets With Buried Gate And Buried Field Rings

Design and experimental analysis of a 1 kW, 800 kHz all-SiC boost DC-DC converter

Analytical PSpice model for SiC MOSFET based high power modules

Modeling of SiC MOSFET with temperature dependent parameters and its applications

Design of a 10 kV SiC MOSFET-based high-density, high-efficiency, modular medium-voltage power converter

Optimal Design of SiC MOSFETs for 20kw DCDC Converter

Design of high temperature SiC LJFET-based logic inverter and integrated gate driver

High-voltage full-SiC power module: Device fabrication, testing and high frequency application in kW-level converter