Abstract:Silicon Carbide (SiC) is a booming semiconductor material with a wider bandgap than silicon, which brings superior electrical performance for applications such as high critical electric field, good high-temperature characteristics, etc. Among SiC devices, MOSFET received increasing attention, due to its excellent advantages such as low switching loss, high operating frequency, etc. In recent years, SiC MOSFETs were under fast development, while facing numerous challenges. For high voltage SiC MOSFET, the size of the device and drift region resistance are the main bottlenecks. The superjunction (SJ) structure is well-known as a "milestone" in the history of power devices, especially for MOSFET. Superjunction achieved a better trade-off between the breakdown voltage and the specific on-resistance by introducing a transverse electric field to the drift layer. A 3.3kV-class SiC SJ MOSFET was so far reported as a ultra-low specific on-resistance for 3.3 m Omega cm(2) at room temperature and 6.2 m Omega cm(2) at 175 degrees C.[21] However, the development of SiC SJ MOSFETs is facing challenges, in terms of the fabrication of the p-pillar, the charge balance condition, etc. In this paper, recent progress on SiC SJ MOSFET was reviewed and listed through countries and regions. Achievements in both theoretical simulation and device fabrication were analyzed and compared. Moreover, constraints and prospects for the development of SiC SJ MOSFET were also discussed. Through this review, it is expected to help researchers to summarize recent advances on the SiC SJ MOSFET and to analyze the future trends, and to provide strategic planning for practitioners.

Design and Experimental Demonstration of 1.35 Kv SiC Super Junction Schottky Diode

Experimental Demonstration and Analysis of a 1.35-Kv 0.92-M $\omega \cdot \text {cm}^{2}$ SiC Superjunction Schottky Diode

Design and Fabrication of 1.92 Kv 4H-Sic Super-Junction SBD with Wide-Trench Termination

3.3 Kv-Class 4H-Sic Epi-Refilled Super-Junction Diode with Repetitive Surge Current Robustness

3.3 kV 4H-SiC Trench Semi-Superjunction Schottky Diode With Improved ON-State Resistance

Fabrication and Application of 1.7KV SiC-Schottky Diodes

A Novel ZVS Dual Bridge DC/DC Converter Using SiC Schottky Diode

Characterization of 1.2 Kv SiC Super-Junction SBD Implemented by Trench and Implantation Technique

Study on 2000V SiC JBS Diodes

4.15 Kv / 4.6 Mω·cm2 4H-Sic Epi-refilled Super-Junction Schottky Diode with Ring Assisted Super-Junction Termination Extension

Fabrication and Characterization of Kilovolt p-Type SiC JBS Diodes With Enhanced Current Capability and Electroluminescence Phenomenon

4H-Sic Super-Junction JFET: Design and Experimental Demonstration

1.43 Kv 4H-Sic Lateral Junction Barrier Schottky Diode with High BFOM (390 MW/cm2)

1.4 3 Kv 4H-Sic Lateral Junction Barrier Schottky Diode with High BFOM (390 MW/cm2)

Development of 1000v Sic Jbs Diodes

4.5kV SiC JBS diodes

Investigations on mesa width design for 4H–SiC trench super junction Schottky diodes

Design and Experimental Study of 4H-Sic Trenched Junction Barrier Schottky Diodes

Breaking the Theoretical Limit of SiC Unipolar Power Device - a Simulation Study

Development of SiC Superjunction MOSFET: A Review

Design and Experimental Study of 1.2kV 4H-SiC Merged PiN Schottky Diode