Abstract:This article presents the design and fabrication results of the silicon carbide (SiC) super-junction Schottky barrier diode (SBD). The impact of two key device structure parameters, i.e., mesa width (MW) and trench width (TW), on the device forward and reverse performance is studied by numeric simulations and measurements. Furthermore, a simple and efficient termination structure, i.e., wide-trench termination, is proposed to protect the device edge. With this termination, the simulated device breakdown voltage is significantly increased from 1423 to 2600 V with a wide-trench termination width (WTW) larger than $20~\mu \text{m}$ . The outermost MW (OMW) of the transition region is also investigated. It is found that the narrower OMW can mitigate the electric field crowding at the top of the outermost mesa and reduce the electrical stress of the dielectric. Devices with different structural parameters are fabricated and measured. The device with WTW $= 50\,\,\mu \text{m}$ and the optimum OMW demonstrates the highest breakdown voltage of 1920 V. The specific ON-resistance ( ${R}_{{\rm \scriptscriptstyle {ON}},\text {sp}}$ ) of this device is 1.6 $\text{m}\Omega \cdot $ cm2. Subtracting the substrate resistance, the ${R}_{{\rm \scriptscriptstyle {ON}},\text {sp}}$ is only 1.2 $\text{m}\Omega \cdot $ cm2. Such device performance successfully breaks the theoretical 1-D limit of the SiC unipolar device. Furthermore, the leakage current path of the fabricated device is investigated by thermal emission microscope (EMMI). Future improvements to reduce the leakage current are also provided.

1.4 3 Kv 4H-Sic Lateral Junction Barrier Schottky Diode with High BFOM (390 MW/cm2)

1.43 Kv 4H-Sic Lateral Junction Barrier Schottky Diode with High BFOM (390 MW/cm2)

2.5mΩ·cm2, 1750V 4H-SiC Junction Barrier Schottky Diodes With Floating Guard Ring Termination Structure

High-Voltage Large-Current 4H-SiC JBS Diodes

Design and Fabrication of 1.92 Kv 4H-Sic Super-Junction SBD with Wide-Trench Termination

4.15 Kv / 4.6 Mω·cm2 4H-Sic Epi-refilled Super-Junction Schottky Diode with Ring Assisted Super-Junction Termination Extension

4.5kV SiC JBS diodes

Design and Experimental Study of 4H-Sic Trenched Junction Barrier Schottky Diodes

3.3 kV 4H-SiC Trench Semi-Superjunction Schottky Diode With Improved ON-State Resistance

Simulation of 4H-SiC Trench Junction Barrier Schottky Diodes with High-k Dielectrics

3.3 Kv-Class 4H-Sic Epi-Refilled Super-Junction Diode with Repetitive Surge Current Robustness

1.2-kV Low-Barrier 4H-SiC JBS Diodes by Virtue of P-Implants Across Dead Field of Current Flow

430-V 12.4- $hboxmomegacdot Hboxcm^2$ Normally off 4H-Sic Lateral JFET

Development of 400 V-tolerant Single-Event Effect Hardened 4H-SiC Schottky Diode with linear energy transfer upto 83.5 MeV·cm 2 /mg

Design and Experimental Demonstration of 4H-SiC Lateral High-Voltage MOSFETs With Double-RESURFs Technology for Power ICs

Design and Fabrication of 1.2 kV/10A 4H-SiC Junction Barrier Schottky Diodes with High Current Density

Monolithic Integration of SiC Lateral MOSFET with Lateral Schottky Diode for Power Converters

Fabrication and Application of 1.7KV SiC-Schottky Diodes

Design and Experimental Demonstration of 1.35 Kv SiC Super Junction Schottky Diode

Experimental Demonstration and Analysis of a 1.35-Kv 0.92-M $\omega \cdot \text {cm}^{2}$ SiC Superjunction Schottky Diode

High-Performance 4H-Sic Junction Barrier Schottky Diodes with Double Resistive Termination Extensions