Abstract:A low value of Schottky barrier height (SBH) ( $\Phi _{B}{)}$ is highly desired to further reduce the power loss in 4H-SiC junction barrier Schottky (JBS) diodes; however, the reduced $\Phi _{B}$ results in serious leakage current ( ${I}_{R}{)}$ when blocking high voltages. In this work, a tunable low $\Phi _{B}$ of 0.92–0.98 eV with an ideal factor ${n}$ = 1.02–1.03 was first realized through effectual rapid thermal annealing (RTA) methods and combined with a trench-assisted stage-style p-type implants taking advantage of dead region for current flow to resolve the ${I}_{\text {R}}$ issue. Numerical simulation demonstrated the superiority of this promising strategy in alleviating the Schottky interface electric field ( ${E}_{\text {S}}{)}$ and suppressing ${I}_{R}$ without constraining the forward current flow. Based on this practical strategy, the fabricated device achieved one order of magnitude less ${I}_{R}$ at 25 °C and 220% enhancement of breakdown voltage ( ${V}_{B}{)}$ at 175 °C in contrast to the conventional low-barrier one. In addition, benefiting from the low $\Phi _{B}$ , the device achieved an ultralow turn-on voltage of 0.47 eV and a remarkable forward voltage drop ( ${V}_{F}{)}$ of 1.36 V extracted at 20 A, indicating 14% lower conduction loss than the titanium-based JBS diodes with the same device configuration. This novel device structure incorporating low-barrier Schottky contact metal and trench-assisted stage-style p-implants (SPs) in the dead region of current flow suggests a promising way to develop more advanced 4H-SiC JBS diodes in the future.

High-Voltage Large-Current 4H-SiC JBS Diodes

4.5kV SiC JBS diodes

1.4 3 Kv 4H-Sic Lateral Junction Barrier Schottky Diode with High BFOM (390 MW/cm2)

Fabrication and Application of 1.7KV SiC-Schottky Diodes

2.5mΩ·cm2, 1750V 4H-SiC Junction Barrier Schottky Diodes With Floating Guard Ring Termination Structure

1.43 Kv 4H-Sic Lateral Junction Barrier Schottky Diode with High BFOM (390 MW/cm2)

Design and Fabrication of 1.2 kV/10A 4H-SiC Junction Barrier Schottky Diodes with High Current Density

4.15 Kv / 4.6 Mω·cm2 4H-Sic Epi-refilled Super-Junction Schottky Diode with Ring Assisted Super-Junction Termination Extension

Study on 2000V SiC JBS Diodes

Simulation, Fabrication and Characterization of 4500v 4H-Sic Jbs Diode

Simulation of 4H-SiC Trench Junction Barrier Schottky Diodes with High-k Dielectrics

3.3 Kv-Class 4H-Sic Epi-Refilled Super-Junction Diode with Repetitive Surge Current Robustness

Design and Experimental Study of 4H-Sic Trenched Junction Barrier Schottky Diodes

High-Performance 4H-Sic Junction Barrier Schottky Diodes with Double Resistive Termination Extensions

1.2-kV Low-Barrier 4H-SiC JBS Diodes by Virtue of P-Implants Across Dead Field of Current Flow

Simulation, fabrication and characterization of 6500V 4H-SiC JBS diode

Development of 10 Kv 4H-Sic JBS Diode with FGR Termination

Development of 1000v Sic Jbs Diodes

Design and Experimental Study of 1.2kV 4H-SiC Merged PiN Schottky Diode

3.3 kV 4H-SiC Trench Semi-Superjunction Schottky Diode With Improved ON-State Resistance

Large Current Ni/4H-SiC SBDs with Field Plate and Implantation Edge Termination Technology