Large Current Ni/4H-SiC SBDs with Field Plate and Implantation Edge Termination Technology

Gang CHEN,Yufei QIN,Song BAI,Zheyang LI,Ping HAN

DOI: https://doi.org/10.3969/j.issn.1000-3819.2009.04.030

2009-01-01

Abstract:This paper describes the growth of epitaxial 4H-SiC layers with low defect density and the fabrication and electrical characteristics of Ni/SiC Schottky barrier diodes (SBDs). Homoepitaxial growth of 4H-SiC on 8° off-oriented Si-face(0001) 4H-SiC substrates was performed at 1 580℃ by using the step controlled epitaxy. The resulting epilayers of 3＂wafer exhibit low defect density. We evaluated the surface characteristics of epilayers by atomic force microscope (AFM) and scanning electron microscope(SEM) measurements. By using B+implantation, an amorphous layer as the edge termination was formed. And we used the PECVD SiO_2 that was annealed for 10 minutes at 1 000℃ as the field plate dielectric. The ideality factor n=1.03, effective Schottky barrier height Φ=1.6 eV of the Ni/4H-SiC SBDs were measured with method of forward current density-voltage (J-V). A very low reverse leakage current below 1.15×10~(-5)A/cm~2 at the bias voltage of-1 102 V was obtained. The Ni/4H-SiC SBDs have an on-state large current of 7.47 A at a forward voltage drop of 3.5 V. The specific on-resistance R_(on) for the Ni/4H-SiC SBD is found to be 6.22 mΩ·cm~2.