Abstract:Heterogeneous integration of β-Ga2O3 on highly thermal conductive SiC substrate by the ion-cutting technique is an effective solution to break the heat-dissipation bottleneck of β-Ga2O3 power electronics. In order to acquire high-quality β-Ga2O3 materials on SiC substrates, it is essential to understand the influence of the ion-cutting process on the current transport in β-Ga2O3 devices and to further optimize the electrical characteristics of the exfoliated β-Ga2O3 materials. In this work, the high quality of β-Ga2O3/SiC structure was constructed by the ion-cutting process, in which an amorphous layer of only 1.2 nm was formed between β-Ga2O3 and SiC. The current transport characteristics of Au/Pt/Ni/β-Ga2O3 Schottky barrier diodes (SBDs) on SiC were systematically investigated. β-Ga2O3 SBDs with a high rectification ratio of 108 were realized on a heterogeneous β-Ga2O3 on-SiC (GaOSiC) substrate. The net carrier concentration of the β-Ga2O3 thin film for GaOSiC substrate was down to about 8% leading to a significantly higher resistivity, compared to the β-Ga2O3 donor wafer, which is attributed to the increase in acceptor-type implantation defects during the ion-cutting process. Furthermore, temperature-dependent current–voltage characteristics suggested that the reverse leakage current was limited by the thermionic emission at a low electric field, while at a high electric field, it was dominated by the Poole–Frenkel emission from E3 deep donors caused by the implantation-induced GaO antisite defects. These results would advance the development of β-Ga2O3 power devices on high thermal conductivity substrate fabricated by ion-cutting technique.

Evaluation of Schottky barrier diodes fabricated directly on processed 4H-SiC(0001) surfaces

Direct Barrier Evaluation Method for SiC Devices with Junction Barrier Schottky Structures Demonstrated with Quasi-Continuous Spacing Variation

Characterization of Ion-Implanted 4H-Sic Schottky Barrier Diodes

Large Current Ni/4H-SiC SBDs with Field Plate and Implantation Edge Termination Technology

Ni Schottky Barrier Diodes on n-type 4H-Silicon Carbide

Numerical and Experimental Analysis of Single Crystal Diamond Schottky Barrier Diodes

Design Methodologies and Fabrication of 4H-Sic Lateral Schottky Barrier Diode on Thin RESURF Layer

Defect Influence on the Electrical Properties of 4H-SiC Schottky Diodes

Accurate modeling and parameter extraction for 6H-SiC Schottky barrier diodes (SBDs) with nearly ideal breakdown voltage

On the models used for TCAD simulations of Diamond Schottky Barrier Diodes

Reduced On-Resistance and Improved 4H-SiC Junction Barrier Schottky Diodes Performance by Laser Annealing on C-Face Ohmic Regions in Thin Structures

Surface Defects in 4H-Sic: Properties, Characterizations and Passivation Schemes

Design and Experimental Study of 4H-Sic Trenched Junction Barrier Schottky Diodes

The Surge Current Failure and Thermal Analysis of 4H-Sic Schottky Barrier Diode

Current transport mechanism of lateral Schottky barrier diodes on β -Ga2O3/SiC structure with atomic level interface

Effect of Various Defects on 4H-Sic Schottky Diode Performance and Its Relation to Epitaxial Growth Conditions

Analysis of trench termination in 4H-nSiC based power devices

1.2-kV Low-Barrier 4H-SiC JBS Diodes by Virtue of P-Implants Across Dead Field of Current Flow

Surface Passivation of Ti/4H-SiC Schottky Barrier Diode

The Impact of the Surface Treatments on the Properties of Gan/3c-Sic/Si Based Schottky Barrier Diodes

Mechanical Manipulation of Silicon-based Schottky Diodes via Flexoelectricity