Abstract:The fact that traditional semiconductors have almost reached their performance limits in high power applications, is leading to failure in high power devices. This failure results from self-heating effects, leading to higher temperature and a breakdown of the electrical contact. The good thermal and mechanical properties of 4H-SiC and Ti3SiC2 and their good performance at high temperatures make them good candidates for high power applications. In order to improve the performance of electrical contacts, a thermo-mechanical simulation was carried out using the finite element method to study the self-heating effects in a high power PN diode made of a 4H-SiC substrate with a Ti3SiC2 electrical contact and Al3Ti metallization. The three-dimensional model took into account the temperature dependency of several thermal and mechanical properties of the different materials to improve calculation accuracy. To simulate the self-heating, the power loss in the diode was calculated from the corresponding direct I-V characteristic. In addition, the interfacial thermal resistances (ITR) between the different layers were varied and studied in the thermo-mechanical investigation, in sequence to determine their effects on the heat dissipation and the resulting stresses in the model. The results show that for realistic ITR values, the ITR barely affects heat diffusion mechanical stresses of the model. Whereas, ITR may cause serious problem to the functionality and the efficiency of some electronic components. On the other hand, extremely large ITR leads to a decrease in the thermal stress in the diode. Good control on the ITR may help to improve the performance of high-power devices in the future, in addition to providing more efficient electrical contacts.

Surface Passivation of Ti/4H-SiC Schottky Barrier Diode

Surface Defects in 4H-Sic: Properties, Characterizations and Passivation Schemes

Off - State Performances of Ideal Schottky Barrier Diodes (SBD) on Diamond and Silicon Carbide

Comparative Study of Si3N4-PECVD and Al2O3-ALD Surface Passivation in T-Shaped Gate InAlAs/InGaAs InP Based HEMTs

Impact of High-k Dielectrics on Breakdown Performances of SiC and Diamond Schottky Diodes

Design and Optimization of Planar Mesa Termination for Diamond Schottky Barrier Diodes

Numerical and Experimental Analysis of Single Crystal Diamond Schottky Barrier Diodes

Surface-Passivation Effects on the Performance of 4H-Sic BJTs

The Impact of the Surface Treatments on the Properties of Gan/3c-Sic/Si Based Schottky Barrier Diodes

Ni Schottky Barrier Diodes on n-type 4H-Silicon Carbide

Characterization of Ion-Implanted 4H-Sic Schottky Barrier Diodes

Evaluation of Schottky barrier diodes fabricated directly on processed 4H-SiC(0001) surfaces

On the models used for TCAD simulations of Diamond Schottky Barrier Diodes

Design of field-plate terminated 4H-SiC Schottky diodes using high-k dielectrics

Analysis of trench termination in 4H-nSiC based power devices

Thermo-Mechanical Simulation of Self-Heating of a High-Power Diode Made of Ti3SiC2 (MAX) Phase-on-4H-SiC Substrate

Study and Optimal Simulation of 4H-Sic Floating Junction Schottky Barrier Diodes' Structures and Electric Properties

Simulation study on 4H–SiC power devices with high-k dielectric FP terminations

Experimental Evaluation of Different Passivation Layers on the Performance of 3kV 4H-SiC BJTs

Optimized Design of 4H-Sic Floating Junction Power Schottky Barrier Diodes

Simulation of 4H-SiC Trench Junction Barrier Schottky Diodes with High-k Dielectrics