Abstract:In this paper, simulation, modeling and experimental studies of 1.2kV/2A 4H-SiC MPS diodes are conducted. First, design considerations for MPS cells and JBS cells are presented. As the pn junction turn-on voltage (V turn ) has a significant impact on the surge current capability of MPS diodes, a lower V turn is desirable. Both simulation and modeling results show that there is a trade-off between the forward voltage drop at nominal current (V F ) and the V turn for the MPS cell design. MPS diodes with different designs are fabricated and their experimental results are compared. It is demonstrated that a wider p+ region accompanied with a larger p+ spacing design can get a better trade-off between the V F and V turn . Moreover, the surge current capability can be improved by 17% when the p+ region width is increased from 8μ m to 20μ m.

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