Abstract:A low value of Schottky barrier height (SBH) ( $\Phi _{B}{)}$ is highly desired to further reduce the power loss in 4H-SiC junction barrier Schottky (JBS) diodes; however, the reduced $\Phi _{B}$ results in serious leakage current ( ${I}_{R}{)}$ when blocking high voltages. In this work, a tunable low $\Phi _{B}$ of 0.92–0.98 eV with an ideal factor ${n}$ = 1.02–1.03 was first realized through effectual rapid thermal annealing (RTA) methods and combined with a trench-assisted stage-style p-type implants taking advantage of dead region for current flow to resolve the ${I}_{\text {R}}$ issue. Numerical simulation demonstrated the superiority of this promising strategy in alleviating the Schottky interface electric field ( ${E}_{\text {S}}{)}$ and suppressing ${I}_{R}$ without constraining the forward current flow. Based on this practical strategy, the fabricated device achieved one order of magnitude less ${I}_{R}$ at 25 °C and 220% enhancement of breakdown voltage ( ${V}_{B}{)}$ at 175 °C in contrast to the conventional low-barrier one. In addition, benefiting from the low $\Phi _{B}$ , the device achieved an ultralow turn-on voltage of 0.47 eV and a remarkable forward voltage drop ( ${V}_{F}{)}$ of 1.36 V extracted at 20 A, indicating 14% lower conduction loss than the titanium-based JBS diodes with the same device configuration. This novel device structure incorporating low-barrier Schottky contact metal and trench-assisted stage-style p-implants (SPs) in the dead region of current flow suggests a promising way to develop more advanced 4H-SiC JBS diodes in the future.

Ni Schottky Barrier Diodes on n-type 4H-Silicon Carbide

P-type 4H and 6H-SiC high-voltage Schottky barrier diodes

Large Current Ni/4H-SiC SBDs with Field Plate and Implantation Edge Termination Technology

Accurate modeling and parameter extraction for 6H-SiC Schottky barrier diodes (SBDs) with nearly ideal breakdown voltage

High-Voltage Large-Current 4H-SiC JBS Diodes

4.5kV SiC JBS diodes

Improvements on high voltage capacity and high temperature performances of Si-based Schottky potential barrier diode

Study and Optimal Simulation of 4H-Sic Floating Junction Schottky Barrier Diodes' Structures and Electric Properties

Off - State Performances of Ideal Schottky Barrier Diodes (SBD) on Diamond and Silicon Carbide

Experimental Study and Characterization of an Ultrahigh-Voltage Ni/4H–SiC Junction Barrier Schottky Rectifier with Near Ideal Performances

Optimized Design of 4H-Sic Floating Junction Power Schottky Barrier Diodes

Design and Experimental Study of 4H-Sic Trenched Junction Barrier Schottky Diodes

Characterization of Ion-Implanted 4H-Sic Schottky Barrier Diodes

Fabrication and Application of 1.7KV SiC-Schottky Diodes

Ni Schottky barrier on heavily doped phosphorous implanted 4H-SiC

Current Transport under High Magnetic Fields in Ni/4h-Sic Schottky Barrier

Study on 2000V SiC JBS Diodes

Evaluation of Schottky barrier diodes fabricated directly on processed 4H-SiC(0001) surfaces

1.2-kV Low-Barrier 4H-SiC JBS Diodes by Virtue of P-Implants Across Dead Field of Current Flow

A Study on the Characteristics of 6H-Sic Schottky Diodes

3.4-kV AlGaN/GaN Schottky Barrier Diode on Silicon Substrate With Engineered Anode Structure