Abstract:This article presents the design and fabrication results of the silicon carbide (SiC) super-junction Schottky barrier diode (SBD). The impact of two key device structure parameters, i.e., mesa width (MW) and trench width (TW), on the device forward and reverse performance is studied by numeric simulations and measurements. Furthermore, a simple and efficient termination structure, i.e., wide-trench termination, is proposed to protect the device edge. With this termination, the simulated device breakdown voltage is significantly increased from 1423 to 2600 V with a wide-trench termination width (WTW) larger than $20~\mu \text{m}$ . The outermost MW (OMW) of the transition region is also investigated. It is found that the narrower OMW can mitigate the electric field crowding at the top of the outermost mesa and reduce the electrical stress of the dielectric. Devices with different structural parameters are fabricated and measured. The device with WTW $= 50\,\,\mu \text{m}$ and the optimum OMW demonstrates the highest breakdown voltage of 1920 V. The specific ON-resistance ( ${R}_{{\rm \scriptscriptstyle {ON}},\text {sp}}$ ) of this device is 1.6 $\text{m}\Omega \cdot $ cm2. Subtracting the substrate resistance, the ${R}_{{\rm \scriptscriptstyle {ON}},\text {sp}}$ is only 1.2 $\text{m}\Omega \cdot $ cm2. Such device performance successfully breaks the theoretical 1-D limit of the SiC unipolar device. Furthermore, the leakage current path of the fabricated device is investigated by thermal emission microscope (EMMI). Future improvements to reduce the leakage current are also provided.

Fabrication and Application of 1.7KV SiC-Schottky Diodes

Study on 2000V SiC JBS Diodes

Development of 1000v Sic Jbs Diodes

4.5kV SiC JBS diodes

High-Voltage Large-Current 4H-SiC JBS Diodes

Design and Fabrication of 1.92 Kv 4H-Sic Super-Junction SBD with Wide-Trench Termination

3.3 Kv-Class 4H-Sic Epi-Refilled Super-Junction Diode with Repetitive Surge Current Robustness

Design and Experimental Demonstration of 1.35 Kv SiC Super Junction Schottky Diode

Simulation, Fabrication and Characterization of 4500v 4H-Sic Jbs Diode

Design and Fabrication of 1.2 kV/10A 4H-SiC Junction Barrier Schottky Diodes with High Current Density

Simulation, fabrication and characterization of 6500V 4H-SiC JBS diode

Experimental Demonstration and Analysis of a 1.35-Kv 0.92-M $\omega \cdot \text {cm}^{2}$ SiC Superjunction Schottky Diode

Experimental Study and Characterization of an Ultrahigh-Voltage Ni/4H–SiC Junction Barrier Schottky Rectifier with Near Ideal Performances

Development of 10 Kv 4H-Sic JBS Diode with FGR Termination

Simulation of 4H-SiC Trench Junction Barrier Schottky Diodes with High-k Dielectrics

1.4 3 Kv 4H-Sic Lateral Junction Barrier Schottky Diode with High BFOM (390 MW/cm2)

Design and Experimental Study of 4H-Sic Trenched Junction Barrier Schottky Diodes

Accurate modeling and parameter extraction for 6H-SiC Schottky barrier diodes (SBDs) with nearly ideal breakdown voltage

Improvements on high voltage capacity and high temperature performances of Si-based Schottky potential barrier diode

1.2-kV Low-Barrier 4H-SiC JBS Diodes by Virtue of P-Implants Across Dead Field of Current Flow

1.43 Kv 4H-Sic Lateral Junction Barrier Schottky Diode with High BFOM (390 MW/cm2)