Abstract:Silicon Carbide (SiC) MOSFETs have gained significant attention in power electronics for their superior characteristics. Despite advances in 1.2kV SiC MOSFET generations, a comprehensive comparative analysis of different device types remains limited. This study examines the short-circuit (SC) behavior of 1.2kV SiC MOSFETs across multiple vendors and generations, including planar and trench structures. Key metrics such as Short Circuit Withstand Time (SCWT), SC energy, SC peak power, SC energy density, and SC current density were evaluated at DC bus voltages of 400V, 600V, and 800V. Our findings reveal that third-generation (3G) devices exhibit inferior SC performance due to smaller die areas that impede heat dissipation, with 800V survival times as low as 2.25 μs for GeneSiC-3G. In contrast, trench-based designs showed improved resilience. Infineon-1G, with an active area 44.3% smaller than Littelfuse-1G and 45% smaller than CREE-2G, achieved comparable SCWT (4.5 μs vs. 4.5 μs for Littelfuse and 4 μs for CREE-2G) while demonstrating superior thermal management, with a SC energy density of 0.096 J/mm² and current density of 41.74 A/mm² at 800V. Similarly, another trench device, Rohm-3G, outperformed planar 3G devices, with a SCWT of 3.5 μs and peak power of 110 kW at 800V. Post-SC failure mechanisms were systematically analyzed using optical microscopy, Lock-In Thermal Emission Microscopy (LITEM), and Focused Ion Beam (FIB), revealing gate leakage paths and damage in the active regions and two-finger area. These findings offer significant insights into the trade-offs between on-state performance and SC robustness, providing manufacturers and designers with crucial guidance for developing optimized SiC MOSFET designs for high-power applications.

The Surge Current Failure and Thermal Analysis of 4H-Sic Schottky Barrier Diode

Reliability Analysis for Commercial SiC MOSFETs in Single Pulse and Repetitive Surge Current Test

Reliability Investigation on SiC Trench MOSFET under Repetitive Surge Current Stress of Body Diode

A Comparative Study of Silicon Carbide Merged PiN Schottky Diodes with Electrical-Thermal Coupled Considerations

The effect of wafer thinning and thermal capacitance on chip temperature of SiC Schottky diodes during surge currents

Investigation of 1200 V SiC MOSFETs' Surge Reliability.

Investigation on Surge Current Capability of 4H-Sic Trench-Gate MOSFETs in Third Quadrant under Various VGS Biases

3.3 Kv-Class 4H-Sic Epi-Refilled Super-Junction Diode with Repetitive Surge Current Robustness

Physics-based spice model on the dynamic characteristics of silicon carbide Schottky barrier diode

The Impact of Process Conditions on Surge Current Capability of 1.2 Kv SiC JBS and MPS Diodes

Investigation and Modeling of the Avalanche Failure Mechanism of 1.2-kV 4H-SiC JMOS

Experimental Investigation of the Single Pulse Surge Current Ruggedness of the Body Diode of SiC Power MOSFETs

Failure Mechanism Analysis of Single-Event Effect in 4H-SiC Inverters

Unveiling microstructural damage for leakage current degradation in SiC Schottky diode after heavy ions irradiation under 200 V

Investigating the Failure Mechanism of Short-Circuit Tests in 1.2-Kv SiC JBS-Integrated MOSFETs

High-Dose Electron Radiation and Unexpected Room-Temperature Self-Healing of Epitaxial SiC Schottky Barrier Diodes

Comprehensive Short Circuit Behavior and Failure Analysis of 1.2kv SiC MOSFETs Across Multiple Vendors and Generations

Description and Verification of the Fundamental Current Mechanisms in Silicon Carbide Schottky Barrier Diodes

Design and Fabrication of 1.92 Kv 4H-Sic Super-Junction SBD with Wide-Trench Termination

Single Pulse Avalanche Robustness and Analysis for 1200-V SiC Junction Barrier Schottky Diode