Abstract:Graphene–silicon Schottky diodes are intriguing devices that straddle the border between classical models and two-dimensional ones. Many papers have been published in recent years studying their operation based on the classical model developed for metal–silicon Schottky diodes. However, the results obtained for diode parameters vary widely in some cases showing very large deviations with respect to the expected range. This indicates that our understanding of their operation remains incomplete. When modeling these devices, certain aspects strictly connected with the quantum mechanical features of both graphene and the interface with silicon play a crucial role and must be considered. In particular, the dependence of the graphene Fermi level on carrier density, the relation of the latter with the density of surface states in silicon and the coupling between in-plane and out-of-plane dynamics in graphene are key aspects for the interpretation of their behavior. Within the thermionic regime, we estimate the zero-bias Schottky barrier height and the density of silicon surface states in graphene/type-p silicon diodes by adapting a kown model and extracting ideality index values close to unity. The ohmic regime, beyond the flat band potential, is modeled with an empirical law, and the current density appears to be roughly proportional to the electric field at the silicon interface; moreover, the graphene-to-silicon electron tunneling efficiency drops significantly in the transition from the thermionic to ohmic regime. We attribute these facts to (donor) silicon surface states, which tend to be empty in the ohmic regime.

Description and Verification of the Fundamental Current Mechanisms in Silicon Carbide Schottky Barrier Diodes

The Fundamental Current Mechanisms in SiC Schottky Barrier Diodes: Physical Model, Experimental Verification and Implications

Mechanism and Physical Model of the Single-Event Leakage Current for SiC JBS Diodes

A Current–Voltage Model for Double Schottky Barrier Devices

Numerical and Experimental Analysis of Single Crystal Diamond Schottky Barrier Diodes

Accurate Modeling of Ni/6H-SiC Schottky Barrier Diode (SBD) Forward Characteristics at High Current Densities

The Effect of Different Mechanism on the Characteristics of SiC Schottky Barrier Diode

An Analytical Model with 2-D Effects for 4H-Sic Trenched Junction Barrier Schottky Diodes

On the models used for TCAD simulations of Diamond Schottky Barrier Diodes

Impact of Surface States in Graphene/p-Si Schottky Diodes

Off - State Performances of Ideal Schottky Barrier Diodes (SBD) on Diamond and Silicon Carbide

The Surge Current Failure and Thermal Analysis of 4H-Sic Schottky Barrier Diode

Analytical assessment of Schottky diodes based on CdS/Si heterostructure: current, capacitance, and conductance analysis using TCAD

Impact of Interface Traps on Current-Voltage Characteristics of 4H-Sic Schottky-Barrier Diodes

Physics-Based Modeling and Validation of 2D Schottky Barrier Field-Effect Transistors

Rf Characterization And Modeling Of Cmos Schottky Diodes

Study of Leakage Current Degradation Based on Stacking Faults Expansion in Irradiated SiC Junction Barrier Schottky Diodes

Modeling of SiC MOSFET Behavior in Short-circuit Transient Considering Gate Leakage Current

Physics-based spice model on the dynamic characteristics of silicon carbide Schottky barrier diode

Mobility Models Based on Forward Current-Voltage Characteristics of P-type Pseudo-Vertical Diamond Schottky Barrier Diodes

Leakage Current and Defect Analysis of Schottky Diodes on Molecular Monolayer-doped Silicon