Abstract:Single-event burnout and single-event leakage current (SELC) in silicon carbide (SiC) power devices induced by heavy ions severely limit their space application, and the underlying mechanism is still unclear. One fundamental problem is lack of high-resolution characterization of radiation damage in the irradiated SiC power devices, which is a crucial indicator of the related mechanism. In this Letter, high-resolution transmission electron microscopy (TEM) was used to characterize the radiation damage in the 1437.6 MeV 181Ta-irradiated SiC junction barrier Schottky diode under 200 V. The amorphous radiation damage with about 52 nm in diameter and 121 nm in length at the Schottky metal (Ti)–semiconductor (SiC) interface was observed. More importantly, in the damage site the atomic mixing of Ti, Si, and C was identified by electron energy loss spectroscopy and high-angle annular dark-field scanning TEM. It indicates that the melting of the Ti–SiC interface induced by localized Joule's heating is responsible for the amorphization and the possible formation of titanium silicide, titanium carbide, or ternary phases. The mushroom-like hillock in the Ti layer can be attributed to Rayleigh–Taylor instability, as another evidence for ever-happened localized melting near the Schottky interface. These modifications at nanoscale in turn cause localized degradation of the Schottky contact, resulting in permanent increase in leakage current. This experimental study provides very valuable clues for a thorough understanding of the SELC mechanism in SiC diodes.

Mechanism and Physical Model of the Single-Event Leakage Current for SiC JBS Diodes

Unveiling microstructural damage for leakage current degradation in SiC Schottky diode after heavy ions irradiation under 200 V

Study of Leakage Current Degradation Based on Stacking Faults Expansion in Irradiated SiC Junction Barrier Schottky Diodes

Study of the Leakage Current Degradation Based on Stacking Faults Expansion in Irradiated SiC Junction Barrier Schottky Diodes

The Fundamental Current Mechanisms in SiC Schottky Barrier Diodes: Physical Model, Experimental Verification and Implications

Description and Verification of the Fundamental Current Mechanisms in Silicon Carbide Schottky Barrier Diodes

Investigating the Failure Mechanism of Short-Circuit Tests in 1.2-Kv SiC JBS-Integrated MOSFETs

High Single-Event Burnout Resistance 4H-Sic Junction Barrier Schottky Diode

Modeling of SiC MOSFET Behavior in Short-circuit Transient Considering Gate Leakage Current

Simulation Study on Single-Event Burnout in Rated 1.2-kV 4H-SiC Super-Junction VDMOS

Research of Single-Event Burnout in 4H-Sic JBS Diode by Low Carrier Lifetime Control

An Analytical Model with 2-D Effects for 4H-Sic Trenched Junction Barrier Schottky Diodes

Development of 400 V-tolerant Single-Event Effect Hardened 4H-SiC Schottky Diode with linear energy transfer upto 83.5 MeV·cm 2 /mg

Investigation of the synergistic effects on 4H-SiC junction barrier Schottky Diodes after multiple irradiation

Novel Design and Modelling of SiC Junction Barrier Schottky Diode with Improved Baliga FOM under High-temperature Applications

A Compact Circuit-Level Model for Single-Event Burnout in SiC Power MOSFET Devices

A perspective on leakage current induced by threading dislocations in 4H-SiC Schottky barrier diodes

The Surge Current Failure and Thermal Analysis of 4H-Sic Schottky Barrier Diode

Direct Barrier Evaluation Method for SiC Devices with Junction Barrier Schottky Structures Demonstrated with Quasi-Continuous Spacing Variation

Influence of Accumulated Radiation Effects on Single-event Burnout in SiC MOSFETs