Abstract:A low value of Schottky barrier height (SBH) ( $\Phi _{B}{)}$ is highly desired to further reduce the power loss in 4H-SiC junction barrier Schottky (JBS) diodes; however, the reduced $\Phi _{B}$ results in serious leakage current ( ${I}_{R}{)}$ when blocking high voltages. In this work, a tunable low $\Phi _{B}$ of 0.92–0.98 eV with an ideal factor ${n}$ = 1.02–1.03 was first realized through effectual rapid thermal annealing (RTA) methods and combined with a trench-assisted stage-style p-type implants taking advantage of dead region for current flow to resolve the ${I}_{\text {R}}$ issue. Numerical simulation demonstrated the superiority of this promising strategy in alleviating the Schottky interface electric field ( ${E}_{\text {S}}{)}$ and suppressing ${I}_{R}$ without constraining the forward current flow. Based on this practical strategy, the fabricated device achieved one order of magnitude less ${I}_{R}$ at 25 °C and 220% enhancement of breakdown voltage ( ${V}_{B}{)}$ at 175 °C in contrast to the conventional low-barrier one. In addition, benefiting from the low $\Phi _{B}$ , the device achieved an ultralow turn-on voltage of 0.47 eV and a remarkable forward voltage drop ( ${V}_{F}{)}$ of 1.36 V extracted at 20 A, indicating 14% lower conduction loss than the titanium-based JBS diodes with the same device configuration. This novel device structure incorporating low-barrier Schottky contact metal and trench-assisted stage-style p-implants (SPs) in the dead region of current flow suggests a promising way to develop more advanced 4H-SiC JBS diodes in the future.

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